LED display microarray and preparation method thereof

Abstract

The invention relates to an LED display microarray and a preparation method thereof and belongs to the technical field of semiconductor illumination. The LED display microarray comprises a substrate epitaxial wafer, a semiconductor matrix isolation region, an insertion layer, an electronic conducting layer, a light-emitting layer, a hole conducting layer, an electronic conducting electrode, a hole conducting electrode, an isolation protecting layer, anode lines and cathode lines. An epitaxial layer is subjected to dry etching so that the electronic conducting layer and a semiconductor matrix cell array are obtained; the electronic conducting layer to the insertion layer is subjected to dry etching so that isolation of each two adjacent cells is achieved, and the semiconductor matrix isolation region is obtained; the electronic conducting electrode is formed to lead the cathode lines out; the isolation protecting layer is deposited; the hole conducting electrode is formed to lead the anode lines out; and the spatially intersectional regions of the anode lines and the cathode lines are display pixels. By the LED display microarray and the preparation method, the insertion layer is grown epitaxially to achieve isolation, the problem of electricity leakage caused by process difficulty in achievement of deep isolation trenches by a dry etching method is reduced, the depth of isolation trenches is decreased, and cost is lowered.

Description

technical field [0001] The invention belongs to the field of semiconductor lighting, and in particular relates to an LED display microarray and a preparation method thereof. technical background [0002] With the rapid development of electronic products and mobile communications, research on micro-display devices is booming. The progress of science and technology and society has given people a more colorful world. At the same time, people's requirements for display devices are also increasing. Light-emitting diodes (LEDs) have the advantages of being all solid and high luminous efficiency, and have been widely used in the field of display and lighting, and display technology has also emerged as a result. However, the key technology in the manufacture of LED micro-display devices lies in the manufacture of isolation trenches. The invention patent No. ZL200720093946.2 proposes to use ICP technology to etch the upper and lower isolation trenches to realize the division of the ...

AI Technical Summary

Problems solved by technology

However, the key technology in the manufacture of LED micro-display devices lies in the manufacture of isolation trenches. The invention patent No. ZL200720093946.2 proposes to use ICP technology to etch the upper and lower isolation trenches to realize the division of the LED light-emitting layer and the light-transmitting layer. This method has many problems. It is difficult to implement and has not been applied to the actual production field

Images