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Silicon-based heterojunction ultraviolet detector and manufacturing method thereof

An ultraviolet detector and heterojunction technology, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, semiconductor devices, etc., can solve the problems of low photoresponsivity, not steep cut-off edge, and photoresponse wavelength cannot be further improved, etc. Achieve the effect of miniaturization and simple manufacturing process

Inactive Publication Date: 2012-12-12
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Some research groups at home and abroad have adopted the method of inserting MgO, CaF between p-Si or n-Si substrate and n-ZnO based film 2 , SiO 2 and other insulating barrier layers to block the migration of photogenerated carriers on the Si side and suppress the response of the Si substrate to the visible light region (Kazuto Koike et al., J.Cryst.Growth, 278 (2005) 288; D.Y.Jiang et al. , Appl.Surf.Sic.256(2010)6153; I.S.Jonget al., Appl.Phys.Lett., 83, (2003)2946), but from the experimental results, the cut-off edges of these detectors are not steep enough, The photoresponse wavelength cannot be further improved, and the photoresponsivity is also low, and the device performance needs to be further improved and improved

Method used

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  • Silicon-based heterojunction ultraviolet detector and manufacturing method thereof
  • Silicon-based heterojunction ultraviolet detector and manufacturing method thereof
  • Silicon-based heterojunction ultraviolet detector and manufacturing method thereof

Examples

Experimental program
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Embodiment 1

[0030] Such as figure 1 As shown, the Si-based heterojunction ultraviolet detector provided in this embodiment includes:

[0031] 1) p-type Si (111) substrate, the substrate is non-doped p-type Si material, carrier concentration ≤ 4 × 10 12 cm -3 ;

[0032] 2) a BeO interface layer on the upper surface of the substrate with a thickness of 5 nm;

[0033] 3) n-type Mg on the BeO interface layer 0.45 Zn 0.55 O thin film layer, the carrier concentration is about 10 15 cm -3 , with a thickness of 300nm;

[0034] 4) Mg 0.45 Zn 0.55 The ohmic electrode on the O film layer is a Ti(10nm) / Au(50nm) metal electrode;

[0035] 5) The In metal electrode on the back of the substrate has a thickness of 0.1 mm.

[0036] The Si-based heterojunction ultraviolet detector provided in this embodiment can be prepared by the following method:

[0037] 1. Utilize the hydrofluoric acid etching method to remove the silicon oxide layer on the surface of the commercially available p-type silico...

Embodiment 2

[0046] The Si-based heterojunction ultraviolet detector provided in this embodiment includes:

[0047] 1) p-type Si (111) substrate, the substrate is non-doped p-type Si material, carrier concentration ≤ 4 × 10 12 cm -3 ;

[0048] 2) The BeO interface layer on the upper surface of the substrate has a thickness of 20nm;

[0049] 3) n-type Mg on the BeO interface layer 0.4 Zn 0.6 O thin film layer, the carrier concentration is about 10 15 cm -3 , with a thickness of 300nm;

[0050] 4) Mg 0.4 Zn 0.6 The ohmic electrode on the O film layer is a Ti(10nm) / Au(50nm) metal electrode;

[0051] 5) The In metal electrode on the back of the substrate has a thickness of 0.1mm.

[0052] The Si-based heterojunction ultraviolet detector provided in this embodiment can be prepared by the following method:

[0053] 1. Utilize the hydrofluoric acid etching method to remove the silicon oxide layer on the surface of the commercially available p-type silicon (111) substrate, and then intr...

Embodiment 3

[0062] The Si-based heterojunction ultraviolet detector provided in this embodiment includes:

[0063] 1) p-type Si (111) substrate, the substrate is non-doped p-type Si material, carrier concentration ≤ 4 × 10 12 cm -3 ;

[0064] 2) a BeO interface layer on the upper surface of the substrate with a thickness of 2nm;

[0065] 3) n-type Mg on the BeO interface layer 0.5 Zn 0.5 O thin film layer, the carrier concentration is about 10 14 cm -3 , with a thickness of 300nm;

[0066] 4) Mg 0.5 Zn 0.5 The ohmic electrode on the O film layer is a Ti(10nm) / Au(50nm) metal electrode;

[0067] 5) The In metal electrode on the back of the substrate has a thickness of 0.1 mm.

[0068] The Si-based heterojunction ultraviolet detector provided in this embodiment can be prepared by the following method:

[0069] 1. Utilize the hydrofluoric acid etching method to remove the silicon oxide layer on the surface of the commercially available p-type silicon (111) substrate, and then intro...

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Abstract

The invention provides a silicon-based heterojunction ultraviolet detector. The detector comprises a p-shaped silicon (Si) substrate, a beryllium oxide (BeO) interface layer on the Si substrate and an n-shaped MxZn1-xO film layer on the BeO interface layer, wherein M relates to magnesium (Mg) or beryllium (Be), and x satisfies the relationship that x is larger than or equal to zero and smaller than or equal to one. The invention further provides a manufacturing method of the silicon-based heterojunction ultraviolet detector.

Description

technical field [0001] The invention relates to a silicon-based heterojunction ultraviolet detector and its manufacturing method, especially using p-Si / BeO / n-M x Zn 1-x O (M=Mg, Be, 0≤x≤1) heterojunction ultraviolet detector and its manufacturing method. Background technique [0002] In recent years, ultraviolet detection technology has attracted much attention due to its wide application prospects in the fields of national defense, secure communication, smoke detection, medicine, biology and space ultraviolet. At present, the practical ultraviolet detectors are mainly ultraviolet vacuum diodes, ultraviolet photomultiplier tubes, ultraviolet cameras, and solid-state ultraviolet detectors. value. Therefore, in recent years, the focus of research at home and abroad has turned to wide-bandgap semiconductor-based solid-state ultraviolet detectors. Compared with traditional ultraviolet detectors, wide bandgap semiconductor detectors have high detection sensitivity (high quant...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/105H01L31/0336H01L31/0352H01L31/18
CPCY02P70/50
Inventor 侯尧楠梅增霞梁会力叶大千梁爽杜小龙
Owner INST OF PHYSICS - CHINESE ACAD OF SCI