Resistance change memory device and method of operating resistance change memory device

Abstract

The invention discloses a resistance variable memory device and an operation method thereof. The variable resistance memory device includes: a bit line; a voltage supply layer; a memory element connected between the bit line and the voltage supply layer, the resistance value of the memory element changing according to an applied voltage. change; and a drive control circuit that causes a first current to flow through the bit line and a second current smaller than the first current to flow through the bit line, whereby by using the second current to A resistance lowering operation that causes the memory element to change from a high resistance state to a low resistance state is controlled. The operating method includes the steps of: flowing a first current through a bit line during the resistance lowering operation; and flowing a second current smaller than the first current through the bit line, thereby controlling all of the memory elements. The resistance reduction operation described above. According to the present invention, current control of bit lines can be performed with improved high-speed performance.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] The present application contains subject matter related to that disclosed in Japanese Priority Patent Application JP 2011-132576 filed in the Japan Patent Office on Jun. 14, 2011, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a resistance change memory device in which a memory element whose resistance value changes according to an applied voltage is connected between a bit line and a source line, and to a method of operating the resistance change memory device. It is alternately connected between the bit line and a voltage supply layer called a "plate". Background technique [0004] A resistance change-type memory device is known in which the resistance value of a memory element of each memory cell is changed by implanting conductive ions into an insulating film or extracting conductive ions from the insulating film. For example, in the non-pa...

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Problems solved by technology

[0012] However, ReRAM also has the disadvantage that it is difficult to obtain a desired resistance value when the accuracy of current control is low, and in particular, excessive application of current makes it difficult to perform resistance increase (reset) operation, or leads to poor repetition characteristics

Therefore, it is difficult to suddenly change the potential of the bit line

Therefore, since the wiring capacitance of the bit line is smaller than that of the word line, the operating speed that should normally be high may not be high enough

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