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Light emitting diode structure

A technology of light-emitting diodes and light-emitting layers, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of great difference between electron concentration and hole concentration, low recombination of electrons and holes, poor current dispersion, etc., to achieve Improve luminous efficiency and promote the effect of recombination

Active Publication Date: 2012-12-19
GENESIS PHOTONICS
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  • Description
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Problems solved by technology

Although this electrode design can improve the problem of poor current dispersion, under this electrode design, due to the different mobility of electrons and holes, the mobility of electrons is faster than that of holes. When the electrons emitted by the branch part are transferred to the second branch part (or when the holes emitted by the second branch part are transferred to the first branch part), the electron concentration and hole density of the second branch part (or the first branch part) The concentration difference is very large, so that the recombination probability of electrons and holes is low, which makes the luminous efficiency of the light-emitting diode structure with such existing electrodes not good.

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  • Light emitting diode structure
  • Light emitting diode structure
  • Light emitting diode structure

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Embodiment Construction

[0034] figure 1 It is a schematic top view of a light emitting diode structure according to an embodiment of the present invention. figure 2 for correspondence figure 1 The cross-sectional view shown by the A-A' line. image 3 for correspondence figure 1 The cross-sectional view shown by the B-B' line.

[0035] Please also refer to figure 1 , figure 2 and image 3 , the light emitting diode structure 100 of this embodiment includes a first type doped semiconductor layer 102 , a second type doped semiconductor layer 104 , a light emitting layer 106 , a first electrode 108 and a second electrode 110 . The light emitting layer 106 is disposed between the first type doped semiconductor layer 102 and the second type doped semiconductor layer 104 . The first electrode 108 is disposed on the first-type doped semiconductor layer 102 , and the second electrode 110 is disposed on the second-type doped semiconductor layer 104 . In this embodiment, the first-type doped semicondu...

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Abstract

A light emitting diode structure comprises a first-type doped semiconductor layer, a second-type doped semiconductor layer, a light emitting layer, a first electrode and a second electrode. The light emitting layer is arranged between the first-type doped semiconductor layer and the second-type doped semiconductor layer, the first electrode is arranged on the first-type doped semiconductor layer and comprises a plurality of branches, and the second electrode is arranged on the second-type doped semiconductor layer and encircles at least one closed area which is located between two adjacent branches.

Description

technical field [0001] The invention relates to a photoelectric element structure, in particular to a light emitting diode structure. Background technique [0002] Since the light emitting diode (LED) structure has the advantages of low power consumption, environmental protection, long service life and fast response rate, it has been widely used in the lighting field and the display field. In order to increase the brightness of light-emitting diodes, large-sized chips are gradually being developed. However, the electrode design of the existing LED structure has the disadvantage of causing poor current dispersion, which makes the electrode design unsuitable for large-sized chips. [0003] In order to improve the above-mentioned problem of poor current dispersion, another conventional electrode has been developed. Such conventional electrodes include a first interdigitated electrode disposed on the N-type doped semiconductor layer and a second interdigitated electrode dispos...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/38H01L33/00
CPCH01L33/38
Inventor 陈正言赖育弘
Owner GENESIS PHOTONICS