Insulated gate bipolar translator (IGBT) chip and method for producing same

Abstract

The embodiment of the invention discloses an insulated gate bipolar translator (IGBT) chip. The IGBT chip comprises a grid pad and a grid bus, and further comprises a compensation resistance region which is positioned between the grid pad and the grid bus. According to the IGBT chip, the compensation resistance region is added between the grid pad and the grid bus, the resistance of the compensation resistance region equals to the grid resistance of the IGBT chip, and the size of the compensation resistance can be regulated according to the requirements of the IGBT chip for preventing the self excited oscillation of an IGBT modular circuit. The compensation resistance region is positioned below the grid pad, so the inner area and volume of the IGBT chip cannot be occupied, moreover, the compensation resistance region is integrated in the chip during the production process of the IGBT chip, the forming process of the compensation resistance only needs to be added during the production process of the IGBT chip, so the production method of the IGBT chip is simple and practicable, and the design cost of the circuit is not increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, and more specifically, to an IGBT chip and a manufacturing method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT for short) is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET), and has a MOSFET The advantages of the high input impedance of the device and the low conduction voltage drop of the power transistor (that is, the giant transistor, GTR for short), because the IGBT has the advantages of small driving power and low saturation voltage, the IGBT is currently used as a new type of power electronic device It is widely used in various fields. [0003] In actual use, in order to improve the current handling capability of the IGBT, multiple IGBT chips are usually packaged in parallel to form an IGBT module. However, due to the exi...

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Problems solved by technology

[0006] Although the first method can accurately control the resistance value of the compensation resistor in series, it increases the cost of the peripheral drive circuit, and because it increases the complexity of the circuit design, it is easy to be neglected in the circuit design, causing danger and making the circuit The performance of the IGBT module is affected; the second method is to package the chip resistor and the IGBT chip together, which increases the area and volume of the IGBT module, especially as the integration of the IGBT module continues to increase, the volume requirements of the module are increasing Strict, the chip resistor in the second method takes up the volume of the module, and at the same time increases the production cost of the IGBT module

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