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Optoelectronic semiconductor chip and method for producing same

An optoelectronic semiconductor, semiconductor technology, applied in semiconductor devices, photovoltaic power generation, circuits, etc., to achieve the effect of improving radiation output coupling and improving efficiency

Active Publication Date: 2013-01-23
OSRAM OPTO SEMICONDUCTORS GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, utilizing conventionally used fabrication methods for fabricating surface structures, such as KOH treatment of the surface, sets limits on the shape and size of the surface structures

Method used

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  • Optoelectronic semiconductor chip and method for producing same
  • Optoelectronic semiconductor chip and method for producing same
  • Optoelectronic semiconductor chip and method for producing same

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Embodiment Construction

[0044] In these figures, the same or the same component parts may be respectively provided with the same reference signs. The components shown and the size relationship between them should not be regarded as correct in principle. To be more precise, for better expressibility and / or for better understanding, each component, such as The dimensions of layers, structures, components, and regions are determined to be exaggeratedly thick or shown on a large scale.

[0045] FIG. 1A shows an embodiment of a semiconductor chip 10 in cross section. The semiconductor chip 10 has a substrate 1 on which a plurality of semiconductor layers are arranged. These semiconductor layers form a semiconductor layer stack 2 with an active layer 2a, which is suitable for generating or receiving electromagnetic radiation. The semiconductor chip 10 also has a radiation exit surface or radiation entrance surface 3 on which the nanostructures 4 are arranged.

[0046] The semiconductor chip 10 is suitable fo...

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Abstract

The invention relates to an optoelectronic semiconductor chip (10), which has a stack (2) of semiconductor layers and a radiation outlet surface or radiation inlet surface (3). The stack (2) of semiconductor layers comprises an active layer (2a), which is suitable for producing or receiving electromagnetic radiation. A plurality of nanostructures (4) that at least partially have at least one sub-structure (41, 42) is arranged in the stack (2) of semiconductor layers and / or on the radiation outlet surface or radiation inlet surface (3). The invention further relates to a method for producing such an optoelectronic semiconductor chip (10).

Description

Technical field [0001] The present invention relates to an optoelectronic semiconductor chip having a stack of semiconductor layers and a radiation exit surface or a radiation entrance surface and a method for manufacturing the optoelectronic semiconductor chip. [0002] This patent application claims the priority of German patent application 10 2010 020 789.6, the disclosure of which is incorporated herein by back reference. Background technique [0003] The power of a radiation-emitting semiconductor chip, such as an LED, or a radiation-receiving semiconductor chip, such as a sensor or a detector, is affected in particular by using the substrate on which the semiconductor layer of the semiconductor chip is grown. The substrate, especially the semiconductor layer of the semiconductor chip, often has a significant difference in expansion coefficient and / or lattice parameter (Gitter parameter). As a result, lattice dislocations and point defects leading to non-radiating or non-rece...

Claims

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Application Information

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IPC IPC(8): H01L31/0236
CPCH01L33/22H01L31/18H01L33/02H01L33/24H01L33/12H01L31/0236H01L31/02327H01L31/02363H01L33/0079Y02E10/50H01L31/02H01L33/0093H01L31/04
Inventor W.贝格鲍尔L.赫佩尔P.德雷希泽尔C.克尔佩尔M.施特拉斯堡P.罗德
Owner OSRAM OPTO SEMICONDUCTORS GMBH