Unlock instant, AI-driven research and patent intelligence for your innovation.

Temperature-controlled semiconductor processing device

A processing device, semiconductor technology, applied in etching and other processing devices, cleaning, and chemical treatment of semiconductor wafer surface fields, to achieve good controllability and good gradient temperature control effect

Active Publication Date: 2013-01-30
WUXI HUAYING MICROELECTRONICS TECH CO LTD
View PDF5 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing devices have not been able to meet the needs of customers.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Temperature-controlled semiconductor processing device
  • Temperature-controlled semiconductor processing device
  • Temperature-controlled semiconductor processing device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0035] For convenience of describing the present invention, first, the microchamber section, which is one of the core components of the temperature-controlled semiconductor processing apparatus, will be described. A cavity for accommodating and processing semiconductor wafers is formed in the microchamber part.

[0036] Please refer to figure 1, which shows a schematic perspective view of the microchamber part in an embodiment 100 of the present invention. The microchamber part 100 includes an upper chamber part 120 and a lower chamber part 140, an upper chamber inner wall and an upper peripheral part are formed in the upper chamber part 120, and a lower chamber is formed in the lower chamber part 140 The inner wall 142 and the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a temperature-controlled semiconductor processing device. The temperature-controlled semiconductor processing device comprises a microcavity part for containing and processing a semiconductor wafer. The semiconductor wafer is loaded in an inner cavity of the microcavity part. A gap allowing processing fluid to flow is formed between the semiconductor wafer and the inner wall of the cavity. The microcavity part further comprises at least one inlet allowing the processing fluid to flow into the cavity and at least one outlet allowing the processing fluid to flow out of the cavity. The microcavity part further comprises temperature control modules disposed in the peripheral areas of the cavity. Compared with the prior art, the temperature-controlled semiconductor processing device attains multi-point temperature control for different areas of the cavity so as to regulate chemical reaction rates of the different inner areas of the cavity by arranging the temperature control modules in the different peripheral areas of the cavity.

Description

【Technical field】 [0001] The invention relates to the field of surface treatment of semiconductor wafers or similar workpieces, in particular to a device for chemically treating the surface of semiconductor wafers, as well as cleaning, etching and other treatments. 【Background technique】 [0002] Wafers are the carriers used to produce integrated circuits. In actual production, the wafers that need to be prepared have a flat, ultra-clean surface, and the existing methods for preparing ultra-clean wafer surfaces can be divided into two categories: wet processes such as immersion and spray techniques, and processes such as Dry treatment process based on chemical vapor and plasma technology. Among them, the wet processing process is a relatively widely used method in the prior art. The wet processing process usually includes a series of steps such as immersing the semiconductor wafer or spraying the semiconductor wafer with an appropriate chemical solution. [0003] The prior...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/302
Inventor 温子瑛
Owner WUXI HUAYING MICROELECTRONICS TECH CO LTD