ldmos device and its manufacturing method

Abstract

An LDMOS component and a manufacturing method therefor. The component comprises a substrate. The substrate comprises a first well region (201), a second well region (202) located within a surface of the first well region (201), a doped region (203) located within a surface of the second well region (202), a field oxide (204) located at a periphery of the doped region (203), a drift region (205) located under the field oxide (204), and a drain region (206) located within a surface of the doped region (203), where a certain distance is provided between an edge of the drain region (206) and an edge of the drift region (205). The component increases the distance between the edge of the drain region and the edge of the drift region, thereby increasing the resistance between the edge of the drain region and the edge of the drift region, increasing a flow path of electric current between the edge of the drain region and the edge of the drift region, and thus increasing a sustained voltage of the component. Hence when an instance of ESD occurs, as the electric current between the drain region and the drift region is no longer concentrated, the amount of heat generated by the component is reduced, and a burnout of the component is prevented, thus providing the LDMOS component with enhanced tolerance against ESD.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, and more specifically, relates to an LDMOS device and a manufacturing method thereof. Background technique [0002] Electrostatic discharge (ESD) is a common natural phenomenon in daily life. The electrostatic discharge process can generate a large current in a short time. For example, the electrostatic discharge phenomenon (HBM for short) that occurs on the human body usually occurs within hundreds of nanoseconds. , the maximum current peak can reach several amperes, while in some other models, such as CDM (charged device model), MM (machine model), the electrostatic discharge occurs for a shorter time and generates a larger current, such a large current Passing through the integrated circuit in a short period of time will seriously exceed the maximum value that the circuit itself can withstand, resulting in serious physical damage to the integrated circuit, and in severe cas...

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Problems solved by technology

[0005] However, for high-voltage devices, their own operating voltage is very high, and the maintenance voltage is very low. It is difficult to use the above method to increase the maintenance voltage of high-voltage devices to the level required to resist ESD. The increase is no longer effective

[0006] LDMOS (LateralDouble-diffuseMOS) devices are commonly used in existing ESD protection devices, especially in high-voltage processes, but under the conditions of large current stress generated by the ESD process, LDMOS devices are easily damaged, especially in high voltage processes

[0007] In the prior art, in order to improve the anti-ESD capability of the LDMOS device, the area of ​​the LDMOS device is usually increased, that is, in the multi-finger structure, the number of LDMOS devices is increased. However, due to the low sustain voltage of the LDMOS device itself, this The effect of this method is not very ideal

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