A kind of light-emitting diode laser etching method

Abstract

The invention discloses a laser etching method for a light-emitting diode, which is used for etching an isolation groove for an integrated light-emitting diode. The method comprises the following steps: manufacturing a groove pattern on the surface of an epitaxial wafer used for manufacturing the integrated light-emitting diode according to the predetermined size; carrying out groove scribing to an epitaxial layer of the epitaxial wafer through a laser scribing device according to the groove pattern till the groove reaches the substrate of the epitaxial wafer; and forming a dielectric insulating layer in the groove. The invention further discloses a method for manufacturing an integrated light-emitting diode by using laser etching. The laser scribing device is used for etching the isolation groove for the integrated light-emitting diode, and a thick mask layer is not required, so that the formation time of the isolation groove is reduced, the process length is reduced, the yield of products is improved, and the product cost is greatly reduced.

Description

technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to a laser etching method of a light emitting diode and a manufacturing method of an integrated light emitting diode. Background technique [0002] The integrated light-emitting diode realizes the metal interconnection between each light-emitting diode through the semiconductor process at the chip level, so that multiple light-emitting diodes can be connected in series or in parallel without using the PCB board, which simplifies the process and reduces the cost. Moreover, the performance of the integrated light-emitting diode is more stable, and it is widely used. [0003] figure 1 It is a schematic diagram of the structure of an integrated light-emitting diode chip. like figure 1 As shown, a plurality of light-emitting diode chips of an integrated light-emitting diode 10 are formed on a unified substrate 11 (such as a sapphire substrate), and each light-emitting diode ch...

AI Technical Summary

Problems solved by technology

However, due to the deep etching depth of the isolation trench of the integrated light emitting diode, the etching process time required by general etching equipment (such as ICP) is long, and in the etching process, the long process time will significantly reduce the efficiency of the ICP equipment. Therefore, the isolation trench etching of integrated light-emitting diodes using inductive plasma coupled etching has a negative impact on equipment, production capacity, and cost.

Moreover, ICP etching is the etching of the front side of the wafer, so a thicker (usually 0.5-2 microns in thickness) masking layer (such as SiO2) needs to be grown on the non-etching area before etching. 2 、Si 3 N 4 etc.) for protection, the process becomes complicated and the cost is high, and the quality of the masking layer will also have a great impact on the product yield

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