Nanowire memristor and manufacture method thereof

A production method and nanowire technology, applied in nanotechnology, nanotechnology, nanotechnology for information processing, etc., can solve the problems of immature semiconductor technology and achieve the effect of simple structure, small size and large integration

Inactive Publication Date: 2013-02-13
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF1 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Professor Cai Shaotang used a bunch of resistors, capacitors, inductors and amplifiers to make a circuit that simulates the effect of memristors. Since the semiconductor technology was not mature enough at that time, he did not find any materials that had obvious memristor effects.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nanowire memristor and manufacture method thereof
  • Nanowire memristor and manufacture method thereof
  • Nanowire memristor and manufacture method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0019] The drawings and their descriptions provided herein are only for illustrating embodiments of the present invention. The shapes and dimensions in the respective drawings are for schematic illustration only, and do not strictly reflect actual shapes and dimensional ratios. Furthermore, the illustrated embodiments of the invention should not be construed as limited to the specific shapes of the regions shown in the figures, the representations in which are schematic and are not intended to limit the scope of the invention.

[0020] figure 2 Shown is a schematic diagram of the basic structure of the vertical nanowire memristor according to the first embodiment of the present invention. figure 2 (a) shows a schemati...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a nanowire memristor and a manufacture method thereof. The nanowire memristor comprises an upper electrode, a lower electrode, and a memory storage layer arranged between the upper electrode and the lower electrode. The manufacture method of the nanowire memristor comprises the following steps of: providing an insulation substrate; forming the lower electrode on the insulation substrate; synthesizing a nanowire on the lower electrode to be used as the memory storage layer; and forming the upper electrode on the nanowire memory storage layer. The memory storage layer comprises a single nanowire or nanowire array. The nanowire memristor disclosed by the invention is small in size, can realize more integration, and has a simple structure and is simple in preparation process.

Description

technical field [0001] The invention relates to the technical field of nanometer and memory, in particular to a nanowire memristor and a manufacturing method thereof. Background technique [0002] Memristors are the fourth passive circuit component to enter mainstream electronics after resistors, capacitors, and inductors. figure 1 Shown are resistors, capacitors, inductors, and memristors, four passive circuit component symbol diagrams. The concept of memristor was proposed in 1971 by Cai Shaotang, a Chinese scientist who was teaching at the University of California, Berkeley. When studying the relationship between charge, current, voltage and magnetic flux, Professor Cai Shaotang deduced that besides resistors, capacitors and inductors, there should be a circuit element that represents the relationship between charge and magnetic flux. The resistance of this circuit element will change with the amount of current passing through it, and when the current stops, its resista...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00G11C13/00B82Y10/00B82Y40/00
Inventor 刘明李颖弢龙世兵刘琦吕杭炳
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap