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Laser device and photoconductive semiconductor switch structure

A switch structure and semiconductor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of shortening the life of photoconductive semiconductor switches, excessive current, etc., and achieve the effects of eliminating assembly links, prolonging service life, and being easy to use

Inactive Publication Date: 2013-02-27
DONGGUAN WUFENG TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the trigger laser covers the entire surface of the photoconductive semiconductor switch, the current filament will concentrate on the edge region of the surface of the photoconductive semiconductor switch, so that the current on the edge region of the surface of the photoconductive semiconductor switch will be too large and shorten the life of the photoconductive semiconductor switch

Method used

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  • Laser device and photoconductive semiconductor switch structure

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Embodiment Construction

[0017] The present invention will be described in detail below in conjunction with the accompanying drawings.

[0018] Such as figure 1 As shown, a laser and photoconductive semiconductor switch structure of the present invention includes a substrate 1, electrodes 2 are respectively arranged on both sides of the top surface of the substrate 1, and several vertical electrodes are evenly arranged on the bottom surface of the substrate 1. The cavity surface emitting semiconductor laser 3, the vertical cavity surface emitting semiconductor laser 3, the substrate 1 and the electrode 2 are integrally packaged. Wherein, the vertical cavity surface emitting semiconductor laser 3 is a bottom emitting vertical cavity surface emitting semiconductor laser, using GaAs (gallium arsenide) and Al x Ga (1-x) As (aluminum gallium arsenide) material, and prepared using epitaxial growth process.

[0019] In the laser and photoconductive semiconductor switch structure of the present invention, ...

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Abstract

The invention relates to the technical field of semiconductor apparatuses and in particular relates to a laser device and photoconductive semiconductor switch structure. The laser device and photoconductive semiconductor switch structure comprises a substrate, wherein electrodes are respectively arranged on the two sides of the top end surface of the substrate; a plurality of vertical-cavity surface-emitting semiconductor laser devices are uniformly arranged on the bottom end surface of the substrate; and the vertical-cavity surface-emitting semiconductor laser devices, the substrate and the electrodes are integrally packaged. According to the laser device and photoconductive semiconductor switch structure disclosed by the invention, in a working process, current forms more current filaments according to laser radiation points, i.e. the break-over current is dispersed to bear bigger break-over current, so that the service lives of the vertical-cavity surface-emitting semiconductor laser devices and the photoconductive semiconductor switch are prolonged. Besides, the laser devices and the photoconductive semiconductor switch are integrally packaged, so that an assembling link is saved in the production process for convenience in use. Moreover, strong-vibration, high-impact and high-temperature using environments can be adapted.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a laser and a photoconductive semiconductor switch structure. Background technique [0002] Photoconductive Semiconductor Switches (PCSS for short) is a semiconductor optoelectronic device that has developed rapidly in recent years. Its working principle is essentially to use the photoelectric effect of semiconductors to modulate the conductivity of semiconductor photoconductive materials. A certain bias voltage is applied to the electrode of the photoconductive semiconductor switch, and the laser pulse is irradiated on the semiconductor material of the switch to generate a large number of carriers. At this time, the switch is turned on and an output electric pulse is generated; The child disappears, the switch returns to the original blocking state, and the output electric pulse disappears. Compared with traditional switches, photoconductive semiconductor switches...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/16
Inventor 杨汇鑫
Owner DONGGUAN WUFENG TECH
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