Laser device and photoconductive semiconductor switch structure
A switch structure and semiconductor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of shortening the life of photoconductive semiconductor switches, excessive current, etc., and achieve the effects of eliminating assembly links, prolonging service life, and being easy to use
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[0017] The present invention will be described in detail below in conjunction with the accompanying drawings.
[0018] Such as figure 1 As shown, a laser and photoconductive semiconductor switch structure of the present invention includes a substrate 1, electrodes 2 are respectively arranged on both sides of the top surface of the substrate 1, and several vertical electrodes are evenly arranged on the bottom surface of the substrate 1. The cavity surface emitting semiconductor laser 3, the vertical cavity surface emitting semiconductor laser 3, the substrate 1 and the electrode 2 are integrally packaged. Wherein, the vertical cavity surface emitting semiconductor laser 3 is a bottom emitting vertical cavity surface emitting semiconductor laser, using GaAs (gallium arsenide) and Al x Ga (1-x) As (aluminum gallium arsenide) material, and prepared using epitaxial growth process.
[0019] In the laser and photoconductive semiconductor switch structure of the present invention, ...
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