Graphical transport layer, organic light-emitting diode(OLED) device containing graphical transport layer and preparation method
A transmission layer and patterning technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of loss of effective light-emitting area, complex structure, and reduced luminous intensity of OLED devices, so as to improve light output efficiency , The effect of maximizing the luminous area
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Embodiment 1
[0062] This embodiment provides a patterned transmission layer, the patterned transmission layer includes a conductive high-refractive-index region and a conductive low-refractive-index region, and the difference in refractive index between the high-refractive-index region and the low-refractive-index region is Value > 0.2. As a preferred implementation manner, the difference in refractive index between the high refraction region and the low refraction region can be selected to be >0.3. As a possible implementation manner, the refractive index of the high refractive index region is between 1.8-3.0; the refractive index of the low refractive index region is between 1.6-2.3.
[0063] In this embodiment, the high refractive index region is made of high refractive index material NPB with a refractive index of 1.8; the low refractive index region is made of NPB with a refractive index of 1.8 and MgF with a refractive index of 1.3. 2 Prepared by mixing, wherein NPB with a refractiv...
Embodiment 2
[0069] The OLED device in this embodiment has the same structure as the OLED device in Embodiment 1;
[0070] The preparation method is also the same, except that when preparing the patterned transmission layer, the low refractive index region uses NPB with a refractive index of 1.8 and MgF with a refractive index of 1.3. 2 Prepared by mixing, wherein NPB with a refractive index of 1.8 accounts for 70 parts by weight, and MgF with a refractive index of 1.3 2 Accounting for 30 parts by weight.
Embodiment 3
[0072]The OLED device in this embodiment has the same structure as the OLED device in Embodiment 1;
[0073] The preparation method is also the same, except that when preparing the patterned transmission layer, the low refractive index region uses NPB with a refractive index of 1.8 and MgF with a refractive index of 1.3. 2 Prepared by mixing, wherein NPB with a refractive index of 1.8 accounts for 50 parts by weight, and MgF with a refractive index of 1.3 2 Accounting for 50 parts by weight.
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