The present invention discloses a photodiode. The photodiode comprises an N electrode, an N-type substrate, a reflection layer, a photosensitive layer, a P-type layer and a P electrode, the N-type substrate is provided with a top surface, a bottom surface and a side surface for light incidence, the side surface is opened to form a first incident surface and a mesa, and the mesa is lower than the top surface and protrudes out of the top surface, the top surface, the first incident surface and the mesa form a Z shape. The included angle [theta] formed by the first incident plane and the table top is larger than 0 degree and smaller than 90 degrees, the photosensitive layer, the P-type layer and the P electrode are sequentially stacked on the top face, the reflecting layer is stacked on the table top, and the N electrode covers the bottom face. According to the invention, the problem of low utilization rate of laser facing the bottom of the side incidence MPD is solved, and the responsivity of the side incidence MPD is improved.