Wear-leveling method for phase change memory

Abstract

The invention relates to a wear-leveling method for a phase change memory. The wear-leveling method comprises the following steps: judging a hot area for frequent writing and a cold area for infrequent writing in the phase change memory; moving the hot area to the cold area and circularly moving until the hot area extends over the whole memory area; and obtaining a physical address of the phase change memory required to be visited through a logic-physical conversion formula. The wear-leveling method has the following advantages: a large amount of writing operations are prevented from gathering in the hot area, and wear-leveling of the phase change memory is achieved, so that the service life of the phase change memory can be prolonged.

Description

technical field [0001] The invention belongs to the technical field of computer storage, and in particular relates to a wear leveling method of a phase change memory. Background technique [0002] Phase Change Memory (Phase Change Memory, PCM) is a new type of non-volatile memory, which has high density, low power consumption, high-speed read and write performance, and has begun to be used in embedded systems to replace traditional NOR memory. Although phase change memory has a longer lifetime than NOR, it still cannot get rid of the dilemma of limited lifetime. A typical phase change memory cell can withstand 10 7 to 10 9 However, repeated writing to the same phase-change memory unit may cause damage to the unit within a few seconds, which brings great challenges to the use of phase-change memory in embedded systems. In recent years, with the continuous increase of the capacity of the phase change memory, it can store key information such as file system metadata and pag...

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Problems solved by technology

However, the existing research work does not take into account the memory access rules of specific applications in embedded systems. Most of the research focuses on application layer optimization, which will undoubtedly increase the complexity of embedded application development, thus limiting the development of phase change memory. Promotion on Embedded Systems

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