Wear-leveling method for phase change memory

A technology of phase change memory and loss leveling, which is applied in the direction of memory address/allocation/relocation, etc. It can solve the problems of increasing the complexity of embedded application development, limiting the promotion of phase change memory, and not considering the memory access rules of embedded systems, etc.

Inactive Publication Date: 2013-03-20
CHONGQING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing research work does not take into account the memory access rules of specific applications in embedded systems. Most of the research focuses on application layer

Method used

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  • Wear-leveling method for phase change memory
  • Wear-leveling method for phase change memory
  • Wear-leveling method for phase change memory

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0014] Below in conjunction with accompanying drawing and embodiment the present invention will be further described:

[0015] In phase-change memory, there is an area where write operations are frequently performed for specific applications, referred to as "hot area" for short, and a large number of other areas have little or no write operations, and this area is referred to as "cold area" for short.

[0016] The invention of the method is: firstly determine the frequently written hot area and the infrequently written cold area in the phase change memory; The address conversion formula obtains the physical address of the phase change memory that needs to be accessed.

[0017] The method for judging the hot zone and the cold zone of the storage tank can use any one in the prior art. "Bloom filter-based dynamic wear leveling for phase-change RAM", Joosung Yun; Sunggu Lee; Sungjoo Yoo, Design, Automation & Test in Europe Conference & Exhibition (DATE), 2012 , Page(s) 1513-151...

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PUM

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Abstract

The invention relates to a wear-leveling method for a phase change memory. The wear-leveling method comprises the following steps: judging a hot area for frequent writing and a cold area for infrequent writing in the phase change memory; moving the hot area to the cold area and circularly moving until the hot area extends over the whole memory area; and obtaining a physical address of the phase change memory required to be visited through a logic-physical conversion formula. The wear-leveling method has the following advantages: a large amount of writing operations are prevented from gathering in the hot area, and wear-leveling of the phase change memory is achieved, so that the service life of the phase change memory can be prolonged.

Description

technical field [0001] The invention belongs to the technical field of computer storage, and in particular relates to a wear leveling method of a phase change memory. Background technique [0002] Phase Change Memory (Phase Change Memory, PCM) is a new type of non-volatile memory, which has high density, low power consumption, high-speed read and write performance, and has begun to be used in embedded systems to replace traditional NOR memory. Although phase change memory has a longer lifetime than NOR, it still cannot get rid of the dilemma of limited lifetime. A typical phase change memory cell can withstand 10 7 to 10 9 However, repeated writing to the same phase-change memory unit may cause damage to the unit within a few seconds, which brings great challenges to the use of phase-change memory in embedded systems. In recent years, with the continuous increase of the capacity of the phase change memory, it can store key information such as file system metadata and pag...

Claims

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Application Information

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IPC IPC(8): G06F12/02
Inventor 刘铎沙行勉诸葛晴凤王添正邵子立谭玉娟梁靓
Owner CHONGQING UNIV
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