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Apparatus for monitoring ion implantation

A technology of ion implantation and ion beam, which is applied in the field of semiconductors and can solve problems such as non-uniform ion distribution

Active Publication Date: 2013-03-27
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, unexpected fluctuations in the ion beam can lead to non-uniform ion distribution on the target wafer

Method used

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  • Apparatus for monitoring ion implantation
  • Apparatus for monitoring ion implantation
  • Apparatus for monitoring ion implantation

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Embodiment Construction

[0032] The making and using of the preferred embodiment are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely specific ways to make and use the invention, and do not limit the scope of the invention.

[0033] The present invention will be described in connection with preferred embodiments in a specific context, namely, an apparatus for monitoring the uniformity of an ion implantation process. However, the present invention can also be applied to various ion implantation processes and devices, such as high energy ion implanter, high current ion implanter, medium current ion implanter ( medium current implanter), etc.

[0034] initial reference figure 1 , shows a schematic diagram of an ion implantation system according to an embodiment. The ion implantation system 100 includes: an ion be...

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Abstract

An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second sensor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second sensor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer. The invention further provides an ion implantation monitoring apparatus.

Description

technical field [0001] The present invention generally relates to the field of semiconductors, and more specifically, to an ion implantation detection device. Background technique [0002] Since the invention of the integrated circuit, the semiconductor industry has experienced rapid growth due to improvements in the integration density of various electronic components (eg, transistors, diodes, resistors, capacitors, etc.). This improvement in integration density results from the shrinking of semiconductor process nodes (eg, shrinking process nodes toward nodes less than 20 nm). Further shrinking process nodes may increase the complexity of manufacturing integrated circuits due to the continued need for miniaturization. [0003] With the development of semiconductor technology, the semiconductor manufacturing process is becoming more and more complex, so complex equipment and devices are required. In semiconductor processing, integrated circuits are fabricated on semicondu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/317H01J37/244H01J37/304
CPCH01J2237/31703H01J2237/24542H01J37/244H01J37/3171H01J2237/30455H01L22/10G01T1/18G01T1/16H01L21/265H01L22/00
Inventor 张钧琳黃至鸿郑迺汉杨棋铭林进祥
Owner TAIWAN SEMICON MFG CO LTD