Unlock instant, AI-driven research and patent intelligence for your innovation.

Gaas/gainp double-junction solar cell and method of making the same

A technology of a solar cell and a manufacturing method, applied in the field of solar cells, can solve problems such as failure to achieve cell performance, unfavorable cell efficiency, etc., and achieve the effects of increasing photocurrent density, improving efficiency, and inhibiting diffusion

Active Publication Date: 2015-09-09
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in the device structure, the traditional structure of using AlGalInP as the barrier of the tunnel junction and the back field of the GaInP top cell cannot achieve good cell performance, which is not conducive to the improvement of cell efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gaas/gainp double-junction solar cell and method of making the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] In multi-junction solar cells, tunnel junctions are used to connect upper and lower cells with different band gaps. Taking the double-junction solar cell GaAs / GaInP as an example, highly doped p+GaAs / n+GaAs or p+AlGaAs / n+GaInP is generally used as the tunnel junction connecting the upper and lower cells. In the traditional structure, after the tunnel junction is grown, a single layer of Al(Ga)InP is used as the back field of the upper cell, and also as the barrier of the tunnel junction to prevent the diffusion of highly doped impurities into the upper and lower cells. In the metal-organic chemical vapor deposition (MOCVD) method, carbon is usually used for p-type doping, and the diffusion coefficient of carbon is small, so the problem of diffusion of impurities is not serious. However, in the molecular beam epitaxy (MBE) growth system, Be is generally used as the p-type dopant source, and there is a serious Be diffusion problem between the heavily doped p+-GaAs / p+-AlGa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a GaAs / GaInP double knot solar battery which comprises a molecular beam epitaxy growing GaAs sub-battery, a GaInP sub-battery located above the GaAs sub-battery and a tunnel junction positioned between the GaAs sub-battery and the GaInP sub-battery. The GaInP sub-battery comprises a barrier layer formed on the tunnel junction, and the barrier layer is of a p+-Al InP / p+-GaInP double heterojunction structure. The invention further discloses a manufacturing method of the double knot solar battery and a multi-junction cascade solar battery. Based on restraint of the p+-Al InP / p+-GaInP double heterojunction structure on diffusion of p doped source Be, a molecular beam epitaxy growing method is utilized, the frequently-used double knot GaInP / GaAs solar battery structure with the AlGaInP serving as a barrier and a back surface field is optimized into the double knot GaInP / GaAs solar battery structure which enables the p+-Al InP / p+-GaInP to serve as a barrier and simultaneously enables the AlInP to serve as the back surface field of a top layer battery. Accordingly, diffusion of the p doped source is refrained, the light current density of the tunnel junction is improved, and efficiency of a double knot solar battery is effectively improved.

Description

technical field [0001] The application belongs to the field of solar cells, and in particular relates to a GaAs / GaInP double-junction solar cell and a manufacturing method thereof. Background technique [0002] As a new energy technology that supports the sustainable development of my country's national economy, high-efficiency solar power generation technology has been listed as a key support and priority development direction in the recently promulgated national medium and long-term scientific and technological development plan. Compared with silicon solar cells, multi-junction III-V compound semiconductor solar cells use a variety of semiconductor materials with different bandgap widths to absorb the part of sunlight that matches their bandgap widths, thereby achieving broad-spectrum absorption of sunlight. The efficiency of double-junction solar cells has exceeded 30%, and the efficiency of triple-junction solar cells has exceeded 40%. Due to its small size and light we...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0687H01L31/0693H01L31/18
CPCY02E10/50Y02E10/544Y02P70/50
Inventor 代盼陆书龙何巍季莲杨辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI