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Method of cleaning after wet etching

A wet etching and wet removal technology, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of inability to completely remove silicon shavings, failure to meet product online inspection and shipment inspection requirements, and silicon shavings residue and other issues, to achieve the effect of meeting high reliability and high radiation resistance performance, ensuring reliability and radiation resistance performance, and increasing process time

Active Publication Date: 2013-04-03
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the ability of the wet process to remove silicon shavings is weaker than that of the dry process, and it cannot completely remove the silicon shavings, which will cause the problem of silicon shavings remaining
In the subsequent process, the residual silicon shavings will be scattered to various parts of the silicon wafer, forming black spots visible to the naked eye, which cannot meet the requirements of product online inspection and shipment inspection
If silicon shavings are left on metal interconnects or package pads, they can cause reliability issues and packaging issues

Method used

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Embodiment Construction

[0023] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0024] The following will refer to image 3 A preferred embodiment of the cleaning method after wet etching according to the present invention is described.

[0025] Please refer to image 3 , the cleaning method after wet etching of the present invention comprises the following steps:

[0026] Step 301 : After finishing the metal aluminum wet etching process, perform the first wet method to remove the residual silicon debris.

[0027] Among them, the metal aluminum wet etching process is to wet-etch the metal aluminum on the thin oxide layer. It should be noted...

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Abstract

The invention discloses a method of cleaning after wet etching to guarantee the surface of a wet-etched silicon wafer to meet the requirement for quality inspection. The method includes: performing first wet removal of silicon dust residue after aluminum wet etching process; forming photoresist on the wet-etched aluminum by photoetching process; drying the photoresist; subjecting the photoresist to dry ashing; and performing second wet removal of silicone dust residue.

Description

technical field [0001] The invention belongs to the field of semiconductor integrated circuit manufacturing technology, and relates to a cleaning method after wet etching of metal aluminum. Background technique [0002] With the continuous increase of the integration level of integrated circuits, the feature size of devices in integrated circuits is continuously reduced, and the sophistication of integrated circuit production and processing is also increasing. In the manufacturing process of integrated circuits, the etching process that determines the final size of the device is becoming more and more important. Under the requirements of the continuous development of integrated circuits to small dimensions, the dry etching process has good sidewall control capabilities, good feature size control capabilities, minimal photoresist peeling and adhesion problems, good uniformity and good The process stability and controllability have been widely used. However, because the wet ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
Inventor 杨冰
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT