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Deposition method of annular thin film

A deposition method and thin-film technology, applied in coating, gaseous chemical plating, metal material coating process, etc., can solve the problems of fine structure of semiconductor devices, difficulty in formation, degradation of film performance such as insulation properties, etc., to achieve Effect of fine structure, excellent film performance, and shortened processing time

Active Publication Date: 2015-08-26
EUGENE TECH CO LTD
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  • Summary
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  • Description
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  • Application Information

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Problems solved by technology

However, it is difficult to realize the fine structure of highly integrated semiconductor devices
[0003] For example, a thinner insulating film is required to realize a fine structure, but if the insulating film is formed in a thin thickness, the film performance such as insulating characteristics degrades
In addition, it is becoming more and more difficult to form thin films with thin thickness while achieving excellent step coverage

Method used

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  • Deposition method of annular thin film
  • Deposition method of annular thin film
  • Deposition method of annular thin film

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Embodiment Construction

[0031] Hereinafter, embodiments of the inventive concept according to the present invention are explained in more detail with reference to the accompanying drawings. However, the embodiments of the inventive concept of the present invention can be modified in various forms, and the scope and spirit of the present invention should not be limited to the embodiments described below. Embodiments of the inventive concept according to the present invention are provided so that those skilled in the art can more completely understand the present invention. In the figures, the same reference numerals refer to the same elements. Furthermore, various elements and regions in the figures are shown schematically. Accordingly, the present invention is not limited to the relative sizes or spacings shown in the drawings.

[0032] figure 1 is a flowchart showing a method of depositing a ring-shaped thin film according to an embodiment of the present invention. refer to figure 1 , loading t...

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Abstract

Provided is a method of depositing a cyclic thin film that can provide excellent film properties and step coverage. The method comprises the steps of forming a silicon thin film by repeating a silicon deposition step for depositing silicon on a substrate by injecting a silicon precursor into a chamber into which the substrate is loaded and a first purge step for removing a non-reacted silicon precursor and a reacted byproduct from the chamber; and forming the insulating film including silicon from the silicon thin film by forming a plasma atmosphere into the chamber.

Description

technical field [0001] The present invention relates to a deposition method of a ring-shaped thin film, more particularly, to a deposition method of a ring-shaped thin film containing a silicon-containing insulating film. Background technique [0002] In recent years, with the development of the semiconductor industry and the needs of users, electronic equipment has become more highly integrated and high-performance. Therefore, semiconductor devices, which are the core components of electronic equipment, also need high integration and high performance. However, it is difficult to achieve a fine structure of highly integrated semiconductor devices. [0003] For example, a thinner insulating film is required to realize a fine structure, but if the insulating film is formed to a thin thickness, film performance such as insulating characteristics degrades. In addition, it has become increasingly difficult to form a thin film having a thin thickness while achieving excellent ste...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/31H01L21/205
CPCH01L21/0262H01L21/02274H01L21/02211H01L21/02164H01L21/02532C23C16/4554C23C16/401C23C16/345H01L21/0217H01L21/02219H01L21/02271H01L21/0228
Inventor 金海元禹相浩
Owner EUGENE TECH CO LTD