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A method for preparing single crystal silicon nanostructure

A technology of nanostructure and single crystal silicon, which is applied in the field of nanoprocessing, can solve the problems of cumbersome process and achieve simple and efficient process

Active Publication Date: 2015-09-30
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method needs to be based on expensive SOI silicon wafers, and the process flow is relatively cumbersome. Therefore, the preparation method of lower cost, simpler and more efficient nanostructures will have application prospects

Method used

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  • A method for preparing single crystal silicon nanostructure
  • A method for preparing single crystal silicon nanostructure
  • A method for preparing single crystal silicon nanostructure

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] Step 1, the quantitative design of the nanostructure on the (100) silicon wafer.

[0059] Please refer to Figure 1, take a silicon wafer with (100) crystal orientation, set the x-axis along the direction of its main cutting edge, and the y-axis along the crystal orientation family perpendicular to it, and arrange them side by side along the x direction on the mask Two identical rectangles are laid out, the length of the short side is a, the length of the long side is l0, and the distance between the two rectangles is d0. Under the condition that a, l0, and d0 are greater than the minimum line width requirements of ordinary mask making and ordinary ultraviolet lithography, two parallel rectangular etching grooves are formed after anisotropic etching of silicon, leaving a wall-shaped single crystal in the middle The silicon structure has a width of d0 and a length of l0. The cross-section is an isosceles trapezoid with a foot of 57°, and its height is determined by the d...

Embodiment 2

[0072] (111) A method for preparing single-crystal silicon nanostructures on a crystal-directed silicon wafer.

[0073] The method for preparing a single crystal silicon nanostructure on a (111) type silicon wafer is basically the same as in Example 1, the difference is that before KOH etching, the single crystal silicon layer under the etching window needs to be etched once, and the etching depth is The height of the nanostructure formed after the anisotropic etching is because the plane parallel to the surface of the (111) silicon wafer is the {111} crystal plane family during the anisotropic etching process, that is, the corrosion self-stopping plane.

[0074] The present invention introduces the deflection angle between the silicon wafer and the mask plate during the anisotropic etching window of single crystal silicon, so that after making the etching windows arranged side by side along the specific crystal direction on the surface of the silicon wafer, the silicon The an...

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Abstract

The invention relates to a method for fabricating a monocrystalline silicon nanostructure and belongs to the technical field of nanofabrication. According to the method, anisotropic corrosion properties of silicon materials are utilized, and a crystal orientation deflection angle is introduced when a corrosion window is in fabrication, so that the monocrystalline silicon nanostructure is directly formed after anisotropic wet etching of monocrystalline silicon through the corrosion window with a large line width. The deflection angle can be accurately controlled through a crystal orientation alignment mark on a mask plate, the entire technological process is simple and efficient, large-scale fabrication can be achieved, and the method is a convenient micro-nano integrated technology. The fabricated nanostructure can be used for studying structural properties of lower dimension monocrystalline silicon materials and studying performances of mechanics, thermotics, electrics and the like, can serve as a functional structure part of a sensor and has an application prospect.

Description

technical field [0001] The invention relates to a crystal orientation alignment for top-down preparation of single-crystal silicon nanostructures, and belongs to the technical field of nano-processing. Background technique [0002] With the development of nanoscience and technology, the nanostructure of materials has been paid more and more attention by researchers because they often show different characteristics from their macroscopic states. Research, so as to better understand various effects at the nanoscale, achieve a deeper understanding of the relationship between the microstructure of materials and their properties, and thus design and manufacture application devices with better performance. [0003] At present, the top-down method of making single crystal silicon nanostructures (top-down), that is, removing unnecessary parts of the material by positioning, leaving nanostructures that meet the design, including electron beam direct writing, deep ultraviolet lithogra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/308B82Y40/00G03F1/42
Inventor 俞骁李铁王跃林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI