A trench manufacturing method for improving warpage of silicon wafer

Abstract

The invention discloses a groove manufacturing method capable of improving silicon slice warping degree. The groove manufacturing method capable of improving the silicon slice warping degree includes the following steps: 1.1 arranging scribing groove area grooves (B) with certain shapes and certain areas in a silicon slice scribing groove, wherein the shapes of the scribing groove area grooves (B) are symmetrical shapes by nth rotation; and 1.2 filling in the scribing groove area grooves (B) with media, wherein the stress of the media which is filled in the scribing groove area grooves (B) is opposite in pattern of manifestation to the stress of media which is filled in a cellular area groove (A). According to the groove manufacturing method capable of improving the silicon slice warping degree, the grooves (B) with the certain shapes and certain proportions are placed in the silicon slice scribing groove, thin films which are opposite in stress to the filling media of the cellular area groove (A) are deposited in the grooves (B), so that the stress difference on a whole silicon slice is balanced, the warping degree of the whole silicon slice is controlled, and the fluency of the technological process is ensured.

Description

technical field [0001] The invention belongs to the manufacturing process of semiconductor integrated circuits, and relates to a groove manufacturing process method, in particular to a groove manufacturing method for improving the warpage of silicon wafers. Background technique [0002] In the field of integrated circuit manufacturing, the continuous pursuit of higher integration and faster computing speed is a powerful driving force for the rapid development of the entire industry. The requirement of integrated circuits to further reduce the production cost makes it an important development direction to use vertical devices with smaller area to replace horizontal devices. As one of the key processes of vertical devices, the deep trench process has been researched and used more and more widely. [0003] The conventional manufacturing process of the deep trench process includes: (1) using a photolithography mask to expose the shape of the trench on the silicon wafer; (2) usi...

AI Technical Summary

Problems solved by technology

Excessive warpage of the silicon wafer will cause the alarm to occur during the transmission or operation of the silicon wafer and the work cannot be completed normally. In severe cases, it may even cause stress fragments to occur during the transmission of the silicon wafer

The difference in the warpage of the above-mentioned bar-shaped grooves in the two perpendicular dimensions will make it more likely that the warpage in one of the dimensions will be too large, which will cause the warpage of the silicon wafer and affect the normal production tape-out

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