A method of controlling the wavelength uniformity of LED epitaxial wafers by adjusting the buffer layer

Abstract

The invention discloses a method for regulating and controlling LED epitaxial wafer wavelength uniformity through a buffer layer. The steps of growing of a substrate, the GaN buffer layer, a non-doping GaN layer, an N-type GaN layer, a multiple quantum well layer, a P-type AlGaN layer and a P-type GaN layer are sequentially involved in the method. The method is characterized by including that deposit rate of the GaN buffer layer on the surface of the substrate is controlled by regulating the growing time, and growing of the GaN layer is performed by cooperating with decomposition and the decomposition of the GaN layer in the recrystallization stage, wherein variation in thickness in growing of the GaN layer corresponds to wavelength difference of a central zone and an edge of a epitaxial wafer. The purpose of controlling the wavelength uniformity can be realized by controlling the growing time of the LED epitaxial wafer buffer layer.

Description

technical field [0001] The invention belongs to the technical field of semiconductors and relates to a method for adjusting and controlling the wavelength uniformity of an LED epitaxial wafer through a buffer layer. Background technique [0002] Gallium nitride-based materials, including InGaN, GaN, and AlGaN alloys, are direct bandgap semiconductors, and the bandgap is continuously adjustable from 1.8-6.2eV. They have excellent properties such as wide direct bandgap, strong chemical bonds, high temperature resistance, and corrosion resistance. It is an ideal material for the production of short-wavelength high-brightness light-emitting devices, ultraviolet light detectors and high-temperature and high-frequency microelectronic devices. It is widely used in full-color large-screen displays, LCD backlights, signal lights, lighting and other fields. [0003] At present, domestic MOCVD using sapphire patterned substrates to grow LED epitaxial wafers will encounter fluctuations ...

AI Technical Summary

Problems solved by technology

[0003] At present, domestic MOCVD using sapphire patterned substrates to grow LED epitaxial wafers will encounter fluctuations in quality due to switching between different types of sapphire patterned substrates, and differences in substrate pattern depth, spacing and other specifications lead to product growth process. The warping changes in the middle affect the uniformity of the wavelength distribution. The products grown under the original conditions are prone to the phenomenon that the wavelengths are longer or shorter than the concentric circles, resulting in non-concentrated wavelength distribution. Low

The existing technology solution is mainly to adjust the stress for the modification of the growth parameters between the epitaxial layers. The obvious disadvantage is that the wavelength uniformity of the product is not easy to control, and it is easy to cause changes in other photoelectric parameters other than the wavelength, which affects the quality parameters.

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