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Groove Filling Method

A filling method and trench filling technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., to achieve the effect of solving stress matching

Active Publication Date: 2015-10-14
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the structure of the trench is a few microns in depth and the size of the opening includes from 0.8 to 7 microns, the filling of the trench becomes quite challenging.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Embodiment 1: For trenches with an opening of 0.8-4 μm and a depth of 5 μm, the process method provided by the present invention is as follows:

[0047] Step 1, such as Figure 7 As shown in Figure 5, an oxide film 2 with a step coverage greater than 80% at the bottom of the trench is deposited on the surface of the device where the trench 1 is etched. The thickness of the deposited oxide film 2 is The deposition method can be low-pressure furnace tube deposition, or other deposition methods. In this embodiment, a low-pressure furnace tube deposition method is used.

[0048] In the second step, the first silicon oxide film 5 is deposited with a thickness m of 1 μm. The deposition method can be a CVD method or a spin coating method. Such as Image 6 Shown.

[0049] Step 3, such as Figure 7 As shown, dry etching is performed on the first silicon oxide film 5, and the etching amount a is 0.8 μm.

[0050] Step 4, such as Figure 8 As shown, the second silicon dioxide film 6 is de...

Embodiment 2

[0054] Example 2: This example is aimed at filling the trenches with larger openings with an opening range of 4-7μm and a depth of 5μm. The specific implementation is to continue on the basis of the process flow of the above-mentioned Example 1, namely After the completion of step 7 of the first embodiment, proceed to the following process (steps 1 to 7 will not be repeated here):

[0055] Step 8, such as Picture 12 As shown, the second silicon dioxide film 6 is deposited again, and the deposited thickness e is 1.7 μm.

[0056] Step 9 such as Figure 13 As shown, the second silicon dioxide film 6 deposited in step 8 is polished by the chemical mechanical polishing method, and the polishing amount f is 1.7 μm. Depending on different trenches or processes and actual effects, the eighth step of deposition and the ninth step of chemical mechanical polishing can be performed in cycles of 1 to 3 times. In this embodiment, the deposition and polishing can be performed each time.

[0057] ...

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Abstract

The invention discloses a filling method of a groove. The filling method of the groove is finished by filling the groove in the manufacturing process of a semiconductor device, wherein a first monox thin film and a second monox thin film are circularly deposited and etched back in the groove. Stress of the first monox thin film is opposite to the stress of the second monox thin film. The two monox thin films with opposite stresses resolve the matching problem of stresses among different monox thin films. Filling requirements of large openings and deep grooves are simultaneously met.

Description

Technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a trench filling method. Background technique [0002] The filling of trenches is a particularly critical step in semiconductor manufacturing. At present, silicon dioxide and its derivatives are widely used in trench filling due to its good film properties. Traditional preparation processes include Spin on Glass, Sub Atmosphere Chemical Vapor Deposition (SACVD: Sub Atmosphere Chemical Vapor Deposition), Plasma Enhanced Chemical Vapor Deposition (PECVD: Plasma Enhanced Chemical Vapor Deposition) and high-density plasma chemical Vapor deposition method (HDPCVD: High Density Plasma Chemical Vapor Deposition) etc. The usual trench structure is that the depth is not more than 1 micron, and the opening is less than 0.25 micron (the size of the opening is fixed). Such a structure can meet the requirement of Void free filling with a simple single-step chemical vapor deposit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/316H01L21/311
Inventor 成鑫华罗啸钱志刚袁苑
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP