Graphene oxide/AgInS2 nano hybrid material and preparation method thereof

A nano-hybrid material and graphene technology, applied in the field of graphene oxide/AgInS2 nano-hybrid material and its preparation, can solve the problems of heavy metal ions restricting the development of semiconductor nanocrystals, and achieve uniform morphology, wide source of raw materials, and manufacturing low cost effect

Inactive Publication Date: 2013-04-17
SHANGHAI NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

After dissociation of such materials, the toxicity of heavy metal ions produced greatly limits the further development of semiconductor nanocrystals.

Method used

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  • Graphene oxide/AgInS2 nano hybrid material and preparation method thereof
  • Graphene oxide/AgInS2 nano hybrid material and preparation method thereof
  • Graphene oxide/AgInS2 nano hybrid material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] 1. In (DEDC) 3 preparation of

[0034] ① Dissolve 3.38g of sodium diethyldithiocarbamate trihydrate in 150mL of water and disperse evenly to obtain a 0.1mol / L DEDC solution;

[0035] ② 1.47g InCl 3 4H 2 O was added to 50mL water, dispersed evenly, and a 0.1mol / L DEDC solution was obtained;

[0036] ③Add the DEDC solution prepared in step ② dropwise to the solution obtained in step ② under magnetic stirring, let it stand for 6 hours until the precipitation is complete, wash the obtained white precipitate with deionized water 3 times, and dry it in vacuum Get the indium precursor In(DEDC) 3 spare.

[0037] 2. Preparation of Ag(DEDC)

[0038] ①Dissolve 1.13g of sodium diethyldithiocarbamate trihydrate in 100mL of water and disperse evenly to obtain a 0.1mol / L DEDC solution;

[0039] ②Add 0.85g AgNO 3Add it into 50mL water, disperse evenly, and get 0.1mol / L DEDC solution;

[0040] ③ Add the DEDC solution prepared in step ② dropwise to the solution obtained in step ...

Embodiment 2

[0046] 1. Silver precursor Ag(DEDC) and indium precursor In(DEDC) 3 The preparation method is with embodiment 1.

[0047] 2. Graphene oxide / AgInS 2 Preparation of nanohybrid materials

[0048] ① Weigh 30mg of graphene oxide and disperse it in 10mL of oleic acid, ultrasonically treat for 1 hour to make it evenly dispersed, then add 5mL of octadecene and ultrasonically treat for 15 minutes, finally add 5mL of oleylamine and mix well.

[0049] ②Weigh 25.6mg silver precursor Ag(DEDC) and 65.3mg indium precursor In(DEDC) 3 Disperse into 20mL oleic acid, stir well to dissolve;

[0050] ③ Slowly add the mixed solution obtained in step ① to the precursor mixed solution prepared in step ②, dropwise for 8-10 minutes, and stir at the same time. The reaction was carried out for 5 hours. Naturally cooled to room temperature, and 5 mL of absolute ethanol was added to precipitate a precipitate. After the precipitate was centrifuged and washed with n-hexane, it was dried for 5 hours at ...

Embodiment 3

[0052] 1. Silver precursor Ag(DEDC) and indium precursor In(DEDC) 3 The preparation method is with embodiment 1.

[0053] 2. Graphene oxide / AgInS 2 Preparation of nanohybrid materials

[0054] ① Weigh 30mg of graphene oxide and disperse it in 10mL of oleic acid, ultrasonically treat for 1 hour to make it evenly dispersed, then add 5mL of octadecene and ultrasonically treat for 15 minutes, finally add 5mL of oleylamine and mix well.

[0055] ②Weigh 29.3mg silver precursor Ag(DEDC) and 55.9mg indium precursor In(DEDC) 3 Disperse into 20mL oleic acid, stir well to dissolve;

[0056] ③ Slowly add the mixed solution obtained in step ① to the precursor mixed solution prepared in step ②, dropwise for 8-10 minutes, and stir at the same time. The reaction was carried out for 5 hours. Naturally cooled to room temperature, and 5 mL of absolute ethanol was added to precipitate a precipitate. After washing the alcoholate by centrifugation with n-hexane, it was dried for 5 hours under...

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Abstract

The invention belongs to the technical field of nano hybrid materials, and particularly relates to a graphene oxide / AgInS2 nano hybrid material and a preparation method thereof. AgInS2 nano particles are modified on the surface of the graphene oxide. The preparation method of the graphene oxide / AgInS2 nano hybrid material includes the steps of evenly dispersing graphene oxide in oleic acid, adding octadecene and oleylamine respectively, and mixing; adding the mixed liquor of graphene oxide slowly into the mixed liquor of oleic acid containing In (DEDC) 3 and Ag (DEDC); and moving to a reaction kettle for reaction after stirring, adding absolute ethyl alcohol for precipitation after cooling, centrifugally washing the precipitate and drying. The graphene oxide / AgInS2 nano hybrid material is good in stability, low in LOD (limit of detection) of NO2<-> and capable of being used in detection of food such as sausage, pot-stewed products and the like; and the preparation method has the characteristics of facilitation of operation, wide raw material source, low production cost, non-toxic and the like, and is suitable for industrial production.

Description

technical field [0001] The invention belongs to the technical field of nano-hybrid materials, in particular to a graphene oxide / AgInS 2 Nano-hybrid materials and methods for their preparation. Background technique [0002] The size of semiconductor nanocrystals is between 1 and 100 nanometers. When the size of nanocrystals is equivalent to the Bohr excitonic radius of the material, nanocrystals show obvious quantum confinement effects, so semiconductor nanocrystals can exhibit many different behaviors from bulk materials. The optical properties of materials have been applied in the fields of solar cells, light-emitting diodes, photodetectors, biomarkers, nonlinear optics, and electrochemical sensors. The most studied nanocrystals are mainly limited to the lead- and cadmium-containing materials of the II-VI, III-V, and IV-VI groups. After dissociation of such materials, the toxicity of the heavy metal ions produced greatly limits the further development of semiconductor nan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G15/00C01B31/04C01B32/23
Inventor 吴惠霞刘丹丹杨艳汤才志贾晓庆杨仕平
Owner SHANGHAI NORMAL UNIVERSITY
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