Wafer temperature detection method

Abstract

The invention discloses a wafer temperature detection method. The wafer temperature detection method comprises the following steps of: providing a wafer; forming a bipolar transistor on the wafer and taking the bipolar transistor as a temperature detection device; calibrating the temperature detection device; applying at least three different base region voltages to the base region of the bipolar transistor in turn, making the bipolar transistor work in a linear region, and measuring to obtain at least three collecting region current values corresponding to the three base region voltage values; and performing exponential curve fitting according to the three applied base region voltage values and the at least three corresponding collecting region current values to obtain at least three test temperatures of the wafer; and solving the mean value of the at least three test temperatures, and taking the mean value as the temperature of the wafer. The accuracy and the efficiency of the temperature detection are improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a wafer temperature detection method. Background technique [0002] In the existing integrated circuit manufacturing, with the continuous progress of semiconductor integrated circuit technology and the continuous reduction of feature size, the number of devices on a single wafer has been continuously increased, the function of the circuit has been improved, the circuit has become increasingly complex, and the process The links in manufacturing are required to be more and more refined, and the reliability of devices is becoming more and more important. [0003] Metal-oxide-semiconductor (MOS) transistors are the most basic devices in semiconductor manufacturing. They are widely used in various integrated circuits. According to the main carrier and the type of doping during manufacturing, they are divided into NMOS and PMOS transistors. [0004] However, the existing int...

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Problems solved by technology

[0006] In the existing MOS transistor manufacturing or analysis testing, the wafer is usually placed on the stage of the processing equipment, and then the wafer is heated by contact or non-contact through the heating device on the stage. The temperature sensor on the stage detects the heating temperature, and the temperature detected by the temperature sensor on the stage is the temperature of the wafer, but this method cannot accurately detect the temperature of the wafer itself, and the efficiency of temperature detection is low

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