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Manufacturing method of back-illuminated cmos image sensor

A technology of an image sensor and a manufacturing method, which can be applied to radiation control devices and other directions, and can solve problems such as contact holes and voids

Active Publication Date: 2016-01-20
OMNIVISION TECH (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] The object of the present invention is to provide a method for manufacturing a back-illuminated CMOS image sensor, to solve the problem of voids in the formed contact holes during the manufacturing process of the existing back-illuminated CMOS image sensor

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  • Manufacturing method of back-illuminated cmos image sensor

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Embodiment Construction

[0031] The manufacturing method of the back-illuminated CMOS image sensor proposed by the present invention will be further described in detail below with reference to the drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0032] The inventors found that the electroplating process has the characteristic that the larger the angle is, the faster the electroplating layer grows. And for the trench, the angle at its opening is the largest. Therefore, in the existing technology, the growth rate of the electroplating layer at the opening of the trench is faster than that in the inside of the trench, which is very easy to cause the trench Premature sealing leads to the problem...

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Abstract

The invention provides a manufacturing method of a back lighting type CMOS (Complementary Metal Oxide Semiconductor) image sensor. The manufacturing method comprises the following steps of supplying a wafer bonding structure, wherein the wafer bonding structure comprises a logic wafer and a pixel wafer which are bonded together; forming a groove in the wafer bonding structure; carrying out smoothing treatment on an opening of the groove; and filling the groove by utilizing a plating process to form a contact hole. According to the manufacturing method of the back lighting type CMOS image sensor, which is provided by the invention, the smoothing treatment is carried out on the opening of the groove, the opening of the groove becomes smooth, namely the angle of the opening of the groove is reduced, and the growth speed of a plating layer positioned on the opening of the groove can be reduced, so that the phenomenon of extremely early sealing of the groove is prevented, a cavity is prevented from being formed in the contact hole, and the reliability of the contact hole is enhanced.

Description

technical field [0001] The invention relates to the technical field of image sensors, in particular to a method for manufacturing a back-illuminated CMOS image sensor. Background technique [0002] The image sensor is developed on the basis of photoelectric technology. The so-called image sensor is a sensor that can sense optical image information and convert it into a usable output signal. Image sensors can improve the visual range of the human eye, enabling people to see the microcosm and macrocosm that cannot be seen by the naked eye, see what happens in places that people cannot reach temporarily, and see various physical and chemical changes beyond the visual range of the naked eye. Life, physiology, the occurrence and development of disease, and so on. It can be seen that image sensors play a very important role in people's culture, sports, production, life and scientific research. It can be said that modern human activities can no longer be separated from image sens...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
Inventor 费孝爱洪齐元
Owner OMNIVISION TECH (SHANGHAI) CO LTD