Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Spray header and chemical vapor deposition equipment

A spray head and gas technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problem of uncontrollable gas distribution, and achieve the goal of avoiding different deposition rates, good deposition effect, and uniform deposition Effect

Inactive Publication Date: 2013-05-01
BRILLIANT LIGHT TECH
View PDF3 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a shower head and chemical vapor deposition equipment including the shower head, so as to solve the problem of uncontrollable gas distribution in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Spray header and chemical vapor deposition equipment
  • Spray header and chemical vapor deposition equipment
  • Spray header and chemical vapor deposition equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] It can be seen from the content recorded in the background art that the shower head of the prior art has the problem of uncontrollable gas distribution. The core idea of ​​the present invention is that, by introducing at least one partition plate, the shower head is divided into multiple areas, so that the zoned control of the gas can be realized, and the airflow field that can meet the demand can be obtained.

[0016] Please refer to figure 1 , the present invention provides a shower head, including a top plate 11 and a gas distribution plate 12, a gas diffusion chamber 10 is defined between the top plate 11 and the gas distribution plate 12; the gas distribution plate 12 has a plurality of The gas outlet channel 13 of the gas distribution plate 12 is connected to the gas diffusion chamber 10, and the gas passes through the gas outlet channel 13 to form an air flow field; the shower head also includes a partition 20; the partition 20 is arranged on the top plate 11 Be...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a spray header which comprises a top plate and a gas distribution plate, wherein a gas diffusion chamber is formed between the top plate and the gas distribution plate; the gas distribution plate is provided with a plurality of gas outlet passages which penetrate through the gas distribution plate and are connected with the gas diffusion chamber; the spray header further comprises a partition board; the partition board is arranged between the top plate and the gas distribution plate; the gas diffusion chamber is divided into at least two gas diffusion regions in a plane parallel to the gas distribution plate; and at least two gas inlet pipes are used to input gas into the at least two gas diffusion regions respectively and independently, so that the distribution of gas can be effectively controlled, and an airflow field which meets the requirement can be obtained. The invention further discloses chemical vapor deposition equipment provided with the spray header, which can achieve good sedimentation effect and high-quality film.

Description

technical field [0001] The invention relates to semiconductor equipment, in particular to a shower head and chemical vapor deposition equipment including the shower head. Background technique [0002] In the chemical vapor deposition process, the corresponding reaction gas is usually provided by the showerhead. Specifically, the reaction gas is provided to the reaction chamber located in the chemical vapor deposition equipment under the control of the control system by the showerhead. substrate, the control system includes multiple pipelines, each pipeline provides a reaction gas to the shower head, through the small holes of the shower head, a variety of reaction gases reach the substrate, and then grow the required structure. [0003] In the reaction chamber of the chemical vapor deposition equipment, the substrate is located on the tray, and the substrate and the tray are arranged opposite to the shower head. In actual production, the growth rate of the epitaxial proces...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
Inventor 乔徽
Owner BRILLIANT LIGHT TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products