Method for increasing open-circuit voltage of N-type substrate HIT (heterojunction with intrinsic thin layer) solar cell

A solar cell, N-type technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as reducing the open circuit voltage of the battery and increasing the series resistance

Inactive Publication Date: 2013-05-01
TRINA SOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A higher barrier height reduces the open circuit voltage of the cell and also increases the series resistance

Method used

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  • Method for increasing open-circuit voltage of N-type substrate HIT (heterojunction with intrinsic thin layer) solar cell
  • Method for increasing open-circuit voltage of N-type substrate HIT (heterojunction with intrinsic thin layer) solar cell

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Embodiment Construction

[0018] N-type substrate HIT battery:

[0019] Such as figure 1 As shown, an embodiment of the present invention uses an N-type silicon wafer to make an N-type substrate HIT cell. Compared with the existing N-type substrate HIT battery, the main difference is that the outside of the p-a-si:H layer (the side opposite to the middle N-type substrate 101) is sequentially covered with a high work function TCO layer 102 and a low work function TCO layer 103 .

[0020] figure 1 An exemplary fabrication method for the shown N-type substrate HIT cell is described in figure 2 middle. First, the N-type silicon wafer is strictly cleaned and textured (201), and then the PECVD method is used to deposit and grow i-a-si:H of about 1-10nm and p-a-si:H of about 1-10nm on the front side (202 and 203 ); then turn the silicon wafer over ( 204 ), and on the other side of the silicon wafer, 1-10nm i-a-si:H and 10-20nm n-a-si:H ( 205 and 206 ) are deposited and grown by PECVD. Then use the reac...

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Abstract

The invention discloses a method for increasing the open-circuit voltage of an N-type substrate HIT (heterojunction with intrinsic thin layer) solar cell. According to the method, the N-type substrate HIT solar cell comprises an N-type crystalline silicon substrate layer, a first and a second intrinsic non-crystalline silicon layers, an N-type non-crystalline silicon layer, a P-type non-crystalline silicon layer, a first TCO (Transparent Conductive Oxide) layer and an electrode, and a second TCO layer and an electrode, wherein the first and second intrinsic non-crystalline silicon layers are formed on both sides of the N-type crystalline silicon substrate layer, the N-type non-crystalline silicon layer is formed outside the first intrinsic non-crystalline silicon layer, the P-type non-crystalline silicon layer is formed outside the second intrinsic non-crystalline silicon layer, the first TCO layer and the electrode are formed outside the N-type non-crystalline silicon layer, the second TCO layer and the electrode are formed outside the P-type non-crystalline silicon layer, the second TCO layer is laminated by a high-work function TCO layer and a low-work function TCO layer, and the high-work function TCO layer comes into contact with the P-type non-crystalline silicon layer. The invention further discloses the corresponding method for forming the solar cell.

Description

technical field [0001] The invention relates to the technical field of thin film solar cells. In particular, the invention discloses a technology for increasing the open-circuit voltage of an N-type substrate HIT solar cell. This technology can also reduce the series resistance of N-type substrate HIT solar cells. Background technique [0002] HIT (Heterojunction with intrinsic Thinlayer) solar cells have attracted more and more attention due to their high efficiency, no need for complicated preparation processes, and small temperature coefficient. Usually the structure of the HIT battery is Ag / TCO / p-a-si:H / i-a-si:H / c-Si(n) / i-a-si:H / n-a-si:H / TCO / Ag (according to the customary expression in the art Method: a-si means amorphous silicon film, which means amorphous silicon film, c-si means crystal silicon means crystalline silicon, i means intrinsic type, p means P type, n means N type, H means hydrogenation; further, the above In the HIT battery structure, p-a-si:H means P-t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/0747H01L31/20
CPCY02E10/50Y02P70/50
Inventor 崔艳峰袁声召石建华陆中丹孟凡英刘正新
Owner TRINA SOLAR CO LTD
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