Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ion source uniform air supply structure device

An ion source and gas supply technology, applied in electrical components, discharge tubes, circuits, etc., can solve problems such as failure of injection beam injection

Inactive Publication Date: 2013-05-08
BEIJING ZHONGKEXIN ELECTRONICS EQUIP
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Inhomogeneity of the injection beam can cause injection failure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ion source uniform air supply structure device
  • Ion source uniform air supply structure device
  • Ion source uniform air supply structure device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The present invention will be further introduced below in conjunction with the accompanying drawings, but not as a limitation to the invention.

[0016] The gas sent in flows into between the gas supply bottom plate (4) and the gas supply cover plate (5) through the gas supply pipe head (6), and the gas supply cover plate (5) is provided with the gas supply pipeline (501) to the gas supply pipeline (507). The uniform flow of gas is realized by utilizing the geometric symmetry of the gas supply pipeline (501) to the gas supply pipeline (507). At this time, uniform gas supply holes (508) to gas supply holes (519) are set on the secondary gas supply pipeline (502) and secondary gas supply pipeline (503) (they communicate with the arc chamber), and the gas flows along the gas supply hole (508) to the gas supply hole (519). The air supply hole (519) flows uniformly into the arc chamber cavity, meeting the requirement of uniform ionization of gas molecules.

[0017] Such as ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an ion source uniform air supply structure device in an ion injection system. The structure device is showed as figure 1. Due to the fact that air supply pipelines (501) to (507) are designed at the bottom of an air supply cover plate to enable the supplied air to flow into an arc chamber cavity uniformly, filaments are installed on two end plates of the arc chamber, when a certain filament current passes through, the filament is heated to emit electrons, at the same time the supplied air and the electrons mutually collide to cause ionization, and at last uniform plasma is formed, so that the arrangement of the air supply cover plate is important to the uniform air supply. The air supply cover plate (5) is made of molybdenum material which is high-temperature-resistant, high-pressure-resistant, high in strength and prominent in conductive characteristics, so that corrosion to the air supply cover plate (5) caused in an air flowing process is reduced. The invention relates to an ion injection device and belongs to the field of semiconductor manufacturing.

Description

technical field [0001] The invention relates to a uniform gas-supply structural device for an ion source, which is directly aimed at making the fed-in gas flow uniformly and enter the arc chamber, and collide with electrons emitted from filaments on both sides to form uniform plasma. The invention provides convenience for multi-faceted uniform air supply applications. technical background [0002] 1. In the ion implantation process of the wafer, the uniformity of the beam current is required to be higher and higher. This requirement directly affects the overall injection quality in the semiconductor field, which is mainly reflected in the following aspects: [0003] 2. Compared with the previous single air supply pipeline, the advantages of this air supply cover are reflected in: [0004] I. The air supply cover plate is made of molybdenum material, and multi-pipelines are used to transmit the air supply, which not only reduces the erosion of the gas supply cover plate by ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01J37/30
Inventor 胡东京吴巧艳彭立波
Owner BEIJING ZHONGKEXIN ELECTRONICS EQUIP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products