Circuit producing reference voltage of high voltage
A reference voltage and circuit generation technology, applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problems of large chip power consumption, waste of chip area, increase in circuit complexity, etc., to simplify the circuit structure and save area Effect
Active Publication Date: 2014-09-17
SINO WEALTH ELECTRONICS
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[0023] The present invention will be further described below in conjunction with specific embodiment and accompanying drawing, set forth more details in the following description so as to fully understand the present invention, but the present invention can obviously be implemented in many other ways different from this description, Those skilled in the art can make similar promotions and deductions based on actual application situations without violating the connotation of the present invention, so the content of this specific embodiment should not limit the protection scope of the present invention.
[0024] The first embodiment of the high-voltage reference voltage generating circuit
[0025] figure 2 It is the high-voltage reference voltage generating circuit of the first embodiment of the present invention. It should be noted that this drawing is only an example, which is not drawn according to the same scale, and should not be taken as a limit to the protection scope o...
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The invention provides a circuit producing reference voltage of high voltage. The circuit producing the reference voltage of the high voltage comprises a first N-channel metal oxide semiconductor (NMOS) tube, a second NMOS tube, a first resistor and a second resistor. A grid electrode of the first NMOS tube is connected with reference voltage of low voltage, a source electrode of the first NMOS tube is connected with one end of the first resistor, and the other end of the first resistor is connected with the ground. A substrate of the first NMOS tube is connected with the source electrode of the first NMOS tube. A source electrode of the second NMOS tube is connected with a drain electrode of the first NMOS tube, and a common connection point of the source electrode of the second NMOS tube and the drain electrode of the first NMOS tube is connected with an output end of the circuit producing the reference voltage of the high voltage. A substrate of the second NMOS tube is connected with the source electrode of the second NMOS tube, and a grid electrode of the second NMOS tube is connected with the drain electrode of the second NMOS tube. A connection joint of the grid electrode of the second NMOS tube and the drain electrode of the second NMOS tube is connected with one end of the second resistor, and the other end of the second resistor is connected with a power source end. Besides, the invention further provides a circuit producing reference voltage of another high voltage. The circuit producing the reference voltage of the high voltage is capable of producing the reference voltage based on any high voltage, so that repeated production of a set of complex reference voltage circuit is avoided, a circuit structure is simplified, and a chip area is saved.
Description
technical field [0001] The present invention relates to the technical field of a reference voltage generation circuit in an analog integrated circuit, in particular, the present invention relates to a circuit for generating a reference voltage based on any high voltage. Background technique [0002] In the field of analog integrated circuits, voltage detection and current detection are often involved. The detection circuit needs a precise reference voltage Vref, and then the voltage to be detected and the reference voltage are obtained through a comparator to obtain an output state. If the voltage to be compared is based on a voltage other than the ground voltage, then the corresponding reference voltage also needs to be generated based on the non-ground voltage. [0003] For example, in the application scheme of multi-cell lithium battery protection, the voltage of multiple cells needs to be detected, so it is also necessary to generate reference voltages Vref1-Vref4 based...
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IPC IPC(8): G05F3/24
Inventor 白胜天罗彦邢巍张树晓
Owner SINO WEALTH ELECTRONICS