Graphene/semiconductor multi-junction cascaded solar cell and preparation method thereof
A technology of solar cells and multi-junction cells, applied in the field of solar cells, can solve the problems of multi-junction cells that are difficult to manufacture and high cost, and achieve the effects of avoiding cell performance degradation, reducing cell cost, and improving conversion efficiency
Active Publication Date: 2015-09-09
苏州市吴中中科育成科技发展有限公司
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[0007] One of the purposes of the present invention is to provide a graphene / semiconductor multi-junction cascaded solar cell, to solve the difficulties in the manufacture of four-junction cells on Ge substrates in different technical solutions or to make low-cost III-V groups / Si Multi-junction solar cells, so as to overcome the defects of difficult production and high cost of multi-junction solar cells in the prior art
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[0034] Another aspect of the present invention aims to provide a method for preparing a graphene / semiconductor multi-junction cascaded solar cell, as one of the more preferred embodiments, which may include:
[0035] Flip-chip grow PN junction multi-junction cells on the substrate, then prepare metal nanoparticles with uniform diameter and uniform density on the surface of PN junction multi-junction cells, transfer single-layer graphene to the surface of Ge (or Si) substrate to prepare Xiao Tertiary junction solar cells, then connect the PN junction multi-junction cells and Schottky junction single-junction cells in series by bonding, then peel off the substrate for recycling, and finally make bottom-ohmic contact electrodes on the Ge or Si substrate surface, On the other side, make front grid-shaped ohmic contact electrodes and anti-reflection film.
[0036] In the present invention, single-layer graphene / Ge or Si Schottky junction single-junction battery replaces PN junction...
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Provided is a novel grapheme / semiconductor multi-junction cascading solar battery and a preparation method of the novel grapheme / semiconductor multi-junction cascading solar battery. The novel grapheme / semiconductor multi-junction cascading solar battery comprises an inverted positive and negative (PN) junction type multi-junction battery, metal nanoparticles and a Schottky unijunction battery which are sequentially linked in series, wherein the Schottky unijunction battery comprises a conducting substrate and a graphene film arranged on one end face of the conducting substrate, and the metal nanoparticles are respectively in ohmic contact with an ohmic contact layer away from a substrate in the inverted PN junction type multi-junction battery and the graphene film. The preparation method of the novel grapheme / semiconductor multi-junction cascading solar battery comprises: the inverted PN junction type multi-junction battery, the metal nanoparticles and the Schottky unijunction battery are linked sequentially in series, then the substrate of the inverted PN junction type multi-junction battery is removed, and top and bottom electrodes are manufactured. By using Schottky unijunction battery to replace the PN junction type battery, manufacturing processes can be simplified and lost can be lowered. By using the metal nanoparticles, wafers can be combined mainly relying on Van der Waals force, and therefore linkage required stress is low, battery performance degradation caused by direct linkage process is avoided, series resistance of a linkage interface is reduced, and transfer efficiency of a solar battery is further improved.
Description
technical field [0001] The invention relates to the field of solar cells, in particular to a graphene / semiconductor multi-junction cascaded solar cell and a preparation method thereof. Background technique [0002] At present, the most efficient multi-junction cell (light concentrating efficiency 43.5%) is a lattice-mismatched GaInP / GaAs / InGaAs (1.9 / 1.42 / 1.0eV) triple-junction cell on a GaAs substrate and a lattice-matched GaInP / GaAs / InGaAsN ( 1.9 / 1.42 / 1.0eV) triple junction cell. In order to further improve the cell efficiency, it is necessary to increase the fourth junction cell to increase the absorption range of the solar spectrum. There are currently three main technical solutions: [0003] (1) Lattice mismatch growth, that is, growing GaInP / GaAs / InGaAs / InGaAs (1.9 / 1.42 / 1.0 / 0.76eV) four-junction cells on GaAs substrates or growing GaInP / GaAs / InGaAs triple-junction cells on Ge; [0004] (2) Lattice matching growth, growing GaInP / GaAs / InGaAsN triple-junction cells on G...
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IPC IPC(8): H01L31/078H01L31/0224H01L31/18
CPCY02E10/50Y02P70/50
Inventor 于淑珍董建荣李奎龙孙玉润赵勇明赵春雨杨辉
Owner 苏州市吴中中科育成科技发展有限公司