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Pecvd oxide-nitride and oxide-silicon stacks for 3d memory application

A technology of silicon nitride and stress, applied in the field of layer stack structure technology, can solve the problem of inefficiency of material layers

Active Publication Date: 2013-05-15
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The problem with the above process is that it can be quite inefficient to deposit each material layer in a different process chamber

Method used

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  • Pecvd oxide-nitride and oxide-silicon stacks for 3d memory application
  • Pecvd oxide-nitride and oxide-silicon stacks for 3d memory application
  • Pecvd oxide-nitride and oxide-silicon stacks for 3d memory application

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Embodiment Construction

[0025] Referring to FIG. 1 , in one embodiment, a multilayer stack structure 101 is formed on a substrate 100 having a first material layer 103 and a second material layer 105 . Subsequent layers can be obtained by repeating the alternating pattern of the first material layer 103 and the second material layer 105 . In one embodiment, the first material may be an oxide and the second material may be a nitride. In other embodiments, the first / second material stack structure may be oxide / silicon, silicon / doped silicon, or silicon / nitride. All these material compositions can be used in BiCS (Bit-Cost Scalable), TCAT (Terabit Cell Array Transistor) and other 3D memory structures. In other embodiments, the first / second material stack structure may be other material compositions. The order in which the first and second material layers are deposited on the substrate can also be reversed.

[0026] The number of layers may depend on the memory device being manufactured. In one embod...

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Abstract

A layer stack of different materials is deposited on a substrate in a single plasma enhanced chemical vapor deposition processing chamber while maintaining a vacuum. A substrate is placed in the processing chamber and a first processing gas is used to form a first layer of a first material on the substrate. A plasma purge and gas purge are performed before a second processing gas is used to form a second layer of a second material on the substrate. The plasma purge and gas purge are repeated and the additional layers of first and second materials are deposited on the layer stack.

Description

[0001] Cross References to Related Applications [0002] This application claims the U.S. Patent Application No. Priority No. 12 / 899,401. The content of the above application is incorporated herein by reference. 1. Technical field [0003] The present invention relates to semiconductor substrate processing systems, and more particularly, the present invention relates to processes for depositing layer stack structures of materials. 2. Background technology [0004] Semiconductor substrate processing systems typically include a processing chamber having a pedestal to support a semiconductor substrate adjacent a processing region within the chamber. The chamber constitutes a vacuum enclosure partially delimiting the processing area. A gas distribution assembly or showerhead provides one or more process gases to the process region. The gas is then heated and / or energized to form a plasma to perform some processes on the substrate. These processes may include plasma enhanced...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205
CPCH01L21/0234H01L21/02274H01L21/0217H01L21/022H01L21/02164H01L21/0262
Inventor N·拉贾戈帕兰X·韩J·A·朴清原敦朴贤秀金秉宪
Owner APPLIED MATERIALS INC
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