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Doped 4N copper wires for bonding in microelectronics devices

A technology of electronic devices and microelectronics, applied in the direction of circuits, connections, welding media, etc., can solve the problems of increased resistivity and cost, and increased resistivity

Inactive Publication Date: 2013-06-12
HERAEUS MATERIALS TECHNOLOGY GMBH & CO KG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A slight increase in resistivity of 5-15% is usually a disadvantage of doped Cu wires
However, if this wire shows excellent reliability performance especially under HAST, then this wire is attractive even with increased resistivity and cost

Method used

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  • Doped 4N copper wires for bonding in microelectronics devices
  • Doped 4N copper wires for bonding in microelectronics devices
  • Doped 4N copper wires for bonding in microelectronics devices

Examples

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Embodiment Construction

[0075] Example embodiments described herein may provide doped 4N Cu wires for bonding in the microelectronic packaging industry. The main doping elements are Ag, Ni, Pd, Au, Pt, Cr, Ca, Ce, Mg, La, Al, P, Fe, B, Zr and Ti, using high purity Cu (>99.99%). Fine wires are drawn from doped Cu. Wires in example embodiments may be bonded to Al bond pads and Ag, Cu, Au, Pd plated surfaces. The HTS results for this wire bond are comparable to commercially available 4N soft Cu reference wire when bonded to Al bond pads and stored at about 175°C for about 1000 hours. The corrosion resistance of the doped wire is advantageously stronger than the 4N soft Cu reference wire. As understood by those skilled in the art, HAST or THB (Temperature Humidity Bias) testing is typically performed on Cu wire bonded and epoxy molded devices and biased or unbiased conditions. During testing, the Cu wire bond interface (ie, the Cu wire soldered to the Al bond pad) undergoes electrochemical based galva...

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Abstract

A doped 4N copper wire for bonding in microelectronics contains one or more corrosion resistance dopant materials selected from Ag, Ni, Pd, Au, Pt, and Cr. A total concentration of the corrosion resistance dopant materials is between about 10 wt. ppm and about 80 wt. ppm.

Description

technical field [0001] The present invention generally relates to doped 4N copper wires for bonding in microelectronics. Background technique [0002] Thin Au, Cu and Al wires are widely used for interconnects in integrated chips. Silver wires have also been investigated for unique applications. For Au and Al wires, 2N to 4N purities (99% to 99.99%) are typically used, while for Cu, only 4N purities are typically used. Cu of 5N to 8N purity has been studied, but it is not used in practice. Dopants are added for specialized applications such as circuit performance, reliability, bondability, corrosion resistance, etc. Wires with diameters typically in the range of 18 μm to 75 μm are commonly used for wire bonding. For high current carrying applications wire diameters typically in the range of 200 μm to 400 μm are used. [0003] The alloys used for the wire are usually continuously cast into rods of 2mm to 25mm diameter and further drawn in steps called coarse, intermediat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/02
CPCB23K35/0216C22C9/00H01L24/45H01L2224/45147H01L2224/48465H01L24/43H01L24/48H01L2224/48472H01L2224/49171H01L2224/73265H01L2224/45124H01L2224/45139H01L2224/45144H01L2224/43H01L2924/01015H01L2924/01047H01L2924/01006H01L2224/48511C22F1/08H01L2224/43848H01L2224/45015H01L2924/181H01L2924/00011H01L24/49H01L2224/05624H01L2224/85439H01L2224/85444H01L2224/85447H01L2224/85464B23K35/302H01L2924/01028H01L2924/01046H01L2924/01079H01L2924/01078H01L2924/01024H01L2924/0102H01L2924/01058H01L2924/01012H01L2924/01057H01L2924/01013H01L2924/01026H01L2924/01005H01L2924/0104H01L2924/01022H01L2924/01204H01L2924/00015H01L2924/00H01L2924/013H01L2924/01008H01L2924/01001H01L2924/01007H01L2924/01016H01L2924/20107H01L2924/20108H01L2924/20109H01L2924/2011H01L2924/20111H01L2924/00013H01L2924/01083H01L2924/01033
Inventor 穆拉利·萨兰加帕尼杨平熹欧根·米尔克
Owner HERAEUS MATERIALS TECHNOLOGY GMBH & CO KG