A Method for Reducing Surface Defects of Aluminum Pad

A liner and defect technology, applied in the field of reducing surface defects of aluminum liner, can solve problems such as peeling, limiting application scope, affecting electrical performance, etc., achieving good step coverage, reducing whisker-like defects, and easily releasing stress.

Active Publication Date: 2015-08-19
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The defect of this method is that the step coverage ability of aluminum metal is not good, and the aluminum layer grown at room temperature cannot cover the passivation layer with steps well, resulting in voids, easy peeling and affecting electrical properties, limiting range of application

Method used

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  • A Method for Reducing Surface Defects of Aluminum Pad
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  • A Method for Reducing Surface Defects of Aluminum Pad

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Embodiment Construction

[0037] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0038] image 3 is a schematic flow chart of depositing an aluminum liner in the present invention, such as image 3 as shown,

[0039] Step 301: Put the substrate into the first reaction chamber, start the first heating device in the first reaction chamber, and control the temperature T in the first reaction chamber 1 At 100℃≤T 1 ≤220°C, such as 100°C, 150°C, 220°C, etc., and the optimum temperature is 200°C;

[0040] Step 302: Gas is introduced into the first reaction chamber, and the direct current power P applied to the first aluminum target 1 Controlled at 28KW≤P 1 ≤35KW, such as 28KW, 32KW, 35KW, etc., and the optimal DC power is 30KW, the first layer of aluminum deposition process is performed to prepare the first aluminum layer on the upper surface of the substrate;

[0041] Step 3...

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Abstract

The invention discloses a method for reducing defects on an aluminum gasket surface. According to the method for reducing the defects on the aluminum gasket surface, an aluminum gasket is divided into two layers and the two layers are respectively deposited. According to first layer aluminum deposition, a thin aluminum layer grows at a low temperature through the method of magnifying target direct current power. Second layer aluminum deposition grows at a high temperature. Due to low reaction temperature, a first aluminum layer is small in grains and smooth in surface, a surface medium layer is effectively controlled, the surface medium layer is easily etched and removed during a follow-up forming process of a metal wire graph, meanwhile, the direct current power is magnified when the aluminum layer grows at the lower temperature, sputtered aluminum ions have large motion energy, and therefore good passivation layer step covering capacity is achieved. When the second aluminum layer grows at high-temperature environment, due to cooling buffering time, temperature of wafer surfaces drops, and due to the fact that the first aluminum layer at the lower layer of the second aluminum layer is smooth in surface, stress can be released easily, and beard-shaped defects are reduced.

Description

technical field [0001] The invention relates to a process method for producing an aluminum pad, in particular to a method for reducing surface defects of the aluminum pad. Background technique [0002] In the semiconductor manufacturing process, in the passivation layer process in the later stage, a layer of aluminum pad is required to be formed on the upper end of the metal interconnection layer, as a lead terminal for testing electrical connection and packaging. [0003] At present, the industry manufactures aluminum pads, and the generally used process methods are as follows: figure 1 As shown, wherein: 201 is a semiconductor substrate, the surface of the substrate is a metal interconnection layer, 202 is a passivation layer, and the passivation layer is generally composed of silicon oxide, silicon nitride, silicon oxynitride, etc. The barrier layer 203 is an aluminum layer, and the deposited aluminum is connected to the metal layer that is etched away in the passivation...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/60
CPCH01L2224/05624
Inventor 赵万金胡彬彬刘睿龙吟倪棋梁陈宏璘
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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