Unlock instant, AI-driven research and patent intelligence for your innovation.

Manufacturing method of five-junction-cascaded photovoltaic battery with antireflection film

A manufacturing method and technology of photovoltaic cells, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of photovoltaic cell current density reduction, decrease, increase transmission, etc.

Inactive Publication Date: 2015-07-15
LIYANG CITY PRODIVITY PROMOTION CENT
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

GaInP / (In)GaAs / InGaAsN / Ge four-crystal lattice-matched cells can theoretically obtain high conversion efficiency, but limited by the difficulty of reducing the defect density of InGaAsN materials, this four-junction cell poses great challenges to material growth.
GaInP / (In)GaAs / InGaAsN / GaAs / Ge five-crystal lattice-matched cells can also theoretically achieve high conversion efficiency, but the current problems are similar to those of four-junction photovoltaic cells
[0004] Moreover, during the photoconversion process of the photovoltaic cell, the loss of reflection reduces the number of incident photons per unit area of ​​the photovoltaic cell, resulting in a decrease in the current density of the photovoltaic cell, thereby affecting the energy conversion efficiency of the battery. In order to improve the photoelectric conversion efficiency of the battery, the battery should be reduced Reflection loss of surface light, increased light transmission

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of five-junction-cascaded photovoltaic battery with antireflection film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] The manufacturing method that the present invention proposes comprises the following steps successively:

[0027] Step 1: sequentially growing GaAs sub-cells (2) and GaInAs sub-cells (3) on the InP substrate (1) using the MOVCD process;

[0028] Step 2: using a vacuum coating machine to vapor-deposit the first anti-reflection layer (4) on the GaInAs sub-cell (3);

[0029] Step 3: sequentially growing GaInP sub-cells (5) and strain-compensated GaAsP / GaInAs superlattice cells (6) on the first anti-reflection layer (4) by MOCVD process;

[0030] Step 4: growing a second anti-reflection layer (7) on the strain-compensated GaAsP / GaInAs superlattice cell (6) by MOCVD process;

[0031] Step 5: using a vacuum coating machine to vapor-deposit the third anti-reflection layer (8) on the second anti-reflection layer (7);

[0032] Step 6: using MOCVD process to grow GaInP sub-cells (9) on the third anti-reflection layer (8);

[0033] Step 7: growing the fourth anti-reflection lay...

Embodiment 2

[0044] Introduce below the preferred embodiment of the manufacturing method that the present invention proposes, and this manufacturing method comprises the following steps successively:

[0045] Step 1: sequentially growing GaAs sub-cells (2) and GaInAs sub-cells (3) on the InP substrate (1) using the MOVCD process;

[0046] Step 2: using a vacuum coating machine to vapor-deposit the first anti-reflection layer (4) on the GaInAs sub-cell (3);

[0047]Step 3: sequentially growing GaInP sub-cells (5) and strain-compensated GaAsP / GaInAs superlattice cells (6) on the first anti-reflection layer (4) by MOCVD process;

[0048] Step 4: growing a second anti-reflection layer (7) on the strain-compensated GaAsP / GaInAs superlattice cell (6) by MOCVD process;

[0049] Step 5: using a vacuum coating machine to vapor-deposit the third anti-reflection layer (8) on the second anti-reflection layer (7);

[0050] Step 6: using MOCVD process to grow GaInP sub-cells (9) on the third anti-refl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a manufacturing method of a five-junction-cascaded photovoltaic battery with an antireflection film. A gallium arsenic (GaAs) sub-battery (2), a gallium indium arsenic (GaInAs) sub-battery (3), a first antireflection layer (4), a gallium arsenide phosphide (GaInP) sub-battery (5), a strain compensation gallium arsenide phosphide (GaAsP) / GaInAs superlattice sub-battery (6), a second antireflection layer (7), a third antireflection layer (8), a GaInP sub-battery (9), a fourth antireflection layer (10), a fifth antireflection layer (12) and a sixth antireflection layer (13) are arranged on an indium phosphide (InP) substrate (1) in sequence. A top electrode (11) is formed on the surface of the sixth antireflection layer (13). A bottom electrode (14) is formed on the whole lower surface of the InP substrate (1).

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic technology, in particular to a method for manufacturing a five-junction cascaded photovoltaic cell with an antireflection film. Background technique [0002] Photovoltaic cells are optoelectronic devices that convert light energy into electrical energy. For photovoltaic cells, single-junction photovoltaic cells can only cover and utilize sunlight in a certain wavelength range. Generally, a variety of semiconductor materials with different band gaps are combined to form a multi-junction photovoltaic cell. [0003] At present, in lattice-matched GaInP / GaAs / Ge triple-junction photovoltaic cells, the maximum photoelectric conversion efficiency can reach 32% under the condition of no concentration. The Ge cell in the triple-junction cell covers a wider spectrum, and its short-circuit current can reach twice that of the other two-junction cell. Due to the restriction of the series connection...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0216
CPCY02P70/50
Inventor 梅欣张俊
Owner LIYANG CITY PRODIVITY PROMOTION CENT