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Method for manufacturing four-junction solar cell with anti-reflection film

A technology for solar cells and anti-reflection films, which is applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc. Problems such as multi-layer anti-reflection coatings need to be improved

Inactive Publication Date: 2015-09-23
LIYANG CITY PRODIVITY PROMOTION CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the multilayer antireflection coating currently used is still unsatisfactory, because the multilayer antireflection coating adopts a multilayer structure, and the refractive index between the multilayer antireflection coatings is difficult to match well. Therefore, the multilayer antireflection coating application still needs to be improved

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  • Method for manufacturing four-junction solar cell with anti-reflection film

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Experimental program
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Embodiment 1

[0018] see figure 1 , the manufacture method of the four-junction solar cell with anti-reflection film proposed by the present invention comprises the following steps:

[0019] Step 1: sequentially grow Ge battery (2), strain compensation GaAsP / GaInAs superlattice battery (3) and GaInAs battery (4) by MOCVD process;

[0020] Step 2: growing the first anti-reflection layer (5) on the GaInAs battery (4) by MOCVD process, and then vapor-depositing the second anti-reflection layer (6) on the surface of the first anti-reflection layer (5) in a vacuum coating machine superior;

[0021] Step 3: growing a GaInP cell (7) on the second anti-reflection layer (6) by MOCVD process;

[0022] Step 4: growing the third anti-reflection layer (8) and the fourth anti-reflection layer (9) sequentially on the GaInP battery (7) by MOCVD process, and then in the vacuum coating machine, the fourth anti-reflection layer (9) Evaporating a fifth anti-reflection layer (10) on the surface;

[0023] St...

Embodiment 2

[0032] Introduce below the preferred embodiment of the manufacturing method of the four-junction solar cell that the present invention proposes with antireflection film, and this method comprises the steps:

[0033] Step 1: sequentially grow Ge battery (2), strain compensation GaAsP / GaInAs superlattice battery (3) and GaInAs battery (4) by MOCVD process;

[0034] Step 2: growing the first anti-reflection layer (5) on the GaInAs battery (4) by MOCVD process, and then vapor-depositing the second anti-reflection layer (6) on the surface of the first anti-reflection layer (5) in a vacuum coating machine superior;

[0035] Step 3: growing a GaInP cell (7) on the second anti-reflection layer (6) by MOCVD process;

[0036] Step 4: growing the third anti-reflection layer (8) and the fourth anti-reflection layer (9) sequentially on the GaInP battery (7) by MOCVD process, and then in the vacuum coating machine, the fourth anti-reflection layer (9) Evaporating a fifth anti-reflection l...

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Abstract

The invention discloses a manufacturing method of a four-junction solar cell with an antireflection film. The manufacturing method includes sequentially growing a Ge cell (2), a strain compensation GaAsP / GaInAs superlattice cell (3), a GaInAs cell (4), a first antireflection layer (5), a second antireflection layer (6), a GaInP cell (7), a third antireflection layer (8), a fourth antireflection layer (9) and a fifth antireflection layer (10); forming a top electrode (11) on the third antireflection layer (8); and forming a bottom electrode (1) on the whole bottom surface of the Ge cell (2).

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a method for manufacturing a four-junction solar cell with an antireflection film. Background technique [0002] A solar cell is an optoelectronic device that converts light energy into electrical energy. For a solar cell, a single-junction solar cell can only cover and utilize sunlight in a certain wavelength range. Generally, a variety of semiconductor materials with different band gaps are combined to form a multi-junction solar cell. [0003] At present, in lattice-matched GaInP / GaAs / Ge triple-junction solar cells, the maximum photoelectric conversion efficiency can reach 32% under the condition of no concentration. However, during the photoconversion process of the solar cell, the loss of reflection reduces the number of incident photons per unit area of ​​the solar cell, resulting in a decrease in the current density of the solar cell, thereby affecti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18C23C14/34
CPCY02P70/50
Inventor 梅欣张俊
Owner LIYANG CITY PRODIVITY PROMOTION CENT