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A five-junction solar cell with an anti-reflection film

A technology for solar cells and anti-reflection films, which is applied to circuits, photovoltaic power generation, electrical components, etc., can solve the problem that the multi-layer anti-reflection film needs to be improved, the multi-layer anti-reflection film is unsatisfactory, and the refractive index of the multi-layer anti-reflection film Difficulty matching well

Active Publication Date: 2016-02-17
LIYANG CITY PRODIVITY PROMOTION CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the multilayer antireflection coating currently used is still unsatisfactory, because the multilayer antireflection coating adopts a multilayer structure, and the refractive index between the multilayer antireflection coatings is difficult to match well. Therefore, the multilayer antireflection coating application still needs to be improved

Method used

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  • A five-junction solar cell with an anti-reflection film

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Embodiment 1

[0013] Such as figure 1 As shown, the five-junction solar cell with the antireflection film proposed by the present invention has the following structure:

[0014] On the bottom electrode (1) there is a Ge cell (2); on the Ge cell (2) there is a GaInAs cell (3); on the GaInAs cell (3) there is a GaInP cell (5); on the GaInP cell (5) ) has a strain-compensated GaAsP / GaInAs superlattice cell (6); on the strain-compensated GaAsP / GaInAs superlattice cell (6) is a GaInP cell (9); among them, the GaInAs cell (3) and the GaInP cell ( 5) There is a first anti-reflection layer (4) between them; there is a second anti-reflection layer (7) and a third anti-reflection layer between the strain compensation GaAsP / GaInAs superlattice cell (6) and GaInP cell (9). layer (8); on the GaInP cell (9) there are fourth anti-reflection layer (10), fifth anti-reflection layer (12) and sixth anti-reflection layer (13), wherein the fourth anti-reflection layer (10) A top electrode (11) is formed on it...

Embodiment 2

[0018] Introduce the preferred embodiment of the five-junction solar cell with anti-reflection film that the present invention proposes below, this five-junction solar cell with anti-reflection film has following structure:

[0019] On the bottom electrode (1) there is a Ge cell (2); on the Ge cell (2) there is a GaInAs cell (3); on the GaInAs cell (3) there is a GaInP cell (5); on the GaInP cell (5) ) has a strain-compensated GaAsP / GaInAs superlattice cell (6); on the strain-compensated GaAsP / GaInAs superlattice cell (6) is a GaInP cell (9); among them, the GaInAs cell (3) and the GaInP cell ( 5) There is a first anti-reflection layer (4) between them; there is a second anti-reflection layer (7) and a third anti-reflection layer between the strain compensation GaAsP / GaInAs superlattice cell (6) and GaInP cell (9). layer (8); on the GaInP cell (9) there are fourth anti-reflection layer (10), fifth anti-reflection layer (12) and sixth anti-reflection layer (13), wherein the fou...

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Abstract

The invention discloses a five-junction solar energy battery with an antireflection film. The five-junction solar energy battery with the antireflection film is characterized in that a germanium (Ge) battery is arranged on a bottom electrode, a gallium indium arsenic (GaInAs) battery is arranged on the Ge battery, a gallium indium phosphide (GaInP) battery is arranged on the GaInAs battery, a strain compensation gallium arsenide phosphide (GaAsP) / gallium indium arsenic (GaInAs) superlattice battery is arranged on the GaInP battery, and a GaInP (9) is arranged on the strain compensation GaAsP / GaInAs superlattice battery, wherein a first antireflection layer is arranged between the GaInAs battery and the GaInP battery, a second antireflection layer and a third antireflection layer are arranged between the strain compensation GaAsP / GaInAs superlattice battery and the GaInP battery, and a fourth antireflection layer, a fifth antireflection layer and a sixth antireflection layer are arranged on the GaInP battery. A top electrode is formed on the fourth antireflection layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a five-junction solar cell with an antireflection film. Background technique [0002] A solar cell is an optoelectronic device that converts light energy into electrical energy. For a solar cell, a single-junction solar cell can only cover and utilize sunlight in a certain wavelength range. Generally, a variety of semiconductor materials with different band gaps are combined to form a multi-junction solar cell. [0003] At present, in lattice-matched GaInP / GaAs / Ge triple-junction solar cells, the maximum photoelectric conversion efficiency can reach 32% under the condition of no concentration. However, during the photoconversion process of the solar cell, the loss of reflection reduces the number of incident photons per unit area of ​​the solar cell, resulting in a decrease in the current density of the solar cell, thereby affecting the energy conversion ef...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/0687
CPCY02E10/544
Inventor 梅欣张俊
Owner LIYANG CITY PRODIVITY PROMOTION CENT