Four-junction solar energy battery with antireflection film
A solar cell and anti-reflection film technology, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problem that the multi-layer anti-reflection film needs to be improved, the multi-layer anti-reflection film is not satisfactory, the refractive index of the multi-layer anti-reflection film difficult to match well
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Embodiment 1
[0013] Such as figure 1 As shown, the four-junction solar cell with the antireflection film proposed by the present invention has the following structure:
[0014] On the bottom electrode 1 there is a Ge cell 2; on the Ge cell 2 is a strain compensating GaAsP / GaInAs superlattice cell 3; on the strain compensating GaAsP / GaInAs superlattice cell 3 is a GaInAs cell 4; on the GaInAs On the As battery 4 is a GaInP battery 7; wherein, there is a first anti-reflection layer 5 and a second anti-reflection layer 6 between the GaInAs battery 4 and the GaInP battery 7; where there is a third anti-reflection layer 8 on the GaInP battery 7 , the fourth anti-reflection layer 9 and the fifth anti-reflection layer 10, wherein a top electrode 11 is formed on the third anti-reflection layer 8;
[0015] Wherein, the first anti-reflection layer 5 is an AlGaInN film with a refractive index of 3.2-3.4 and a thickness of 30-40 nm; the second anti-reflection layer 6 is a ZnS film with a refractive i...
Embodiment 2
[0018] Introduce the preferred embodiment of the four-junction solar cell with anti-reflection film that the present invention proposes below, this four-junction solar cell with anti-reflection film has following structure:
[0019] On the bottom electrode 1 there is a Ge cell 2; on the Ge cell 2 is a strain compensating GaAsP / GaInAs superlattice cell 3; on the strain compensating GaAsP / GaInAs superlattice cell 3 is a GaInAs cell 4; on the GaInAs On the As battery 4 is a GaInP battery 7; wherein, there is a first anti-reflection layer 5 and a second anti-reflection layer 6 between the GaInAs battery 4 and the GaInP battery 7; where there is a third anti-reflection layer 8 on the GaInP battery 7 , the fourth anti-reflection layer 9 and the fifth anti-reflection layer 10, wherein a top electrode 11 is formed on the third anti-reflection layer 8;
[0020] Among them, the first anti-reflection layer 5 is an AlGaInN film with a refractive index of 3.3 and a thickness of 36 nm; the ...
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