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Four-junction solar energy battery with antireflection film

A solar cell and anti-reflection film technology, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problem that the multi-layer anti-reflection film needs to be improved, the multi-layer anti-reflection film is not satisfactory, the refractive index of the multi-layer anti-reflection film difficult to match well

Inactive Publication Date: 2015-07-15
LIYANG CITY PRODIVITY PROMOTION CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the multilayer antireflection coating currently used is still unsatisfactory, because the multilayer antireflection coating adopts a multilayer structure, and the refractive index between the multilayer antireflection coatings is difficult to match well. Therefore, the multilayer antireflection coating application still needs to be improved

Method used

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  • Four-junction solar energy battery with antireflection film

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Embodiment 1

[0013] Such as figure 1 As shown, the four-junction solar cell with the antireflection film proposed by the present invention has the following structure:

[0014] On the bottom electrode 1 there is a Ge cell 2; on the Ge cell 2 is a strain compensating GaAsP / GaInAs superlattice cell 3; on the strain compensating GaAsP / GaInAs superlattice cell 3 is a GaInAs cell 4; on the GaInAs On the As battery 4 is a GaInP battery 7; wherein, there is a first anti-reflection layer 5 and a second anti-reflection layer 6 between the GaInAs battery 4 and the GaInP battery 7; where there is a third anti-reflection layer 8 on the GaInP battery 7 , the fourth anti-reflection layer 9 and the fifth anti-reflection layer 10, wherein a top electrode 11 is formed on the third anti-reflection layer 8;

[0015] Wherein, the first anti-reflection layer 5 is an AlGaInN film with a refractive index of 3.2-3.4 and a thickness of 30-40 nm; the second anti-reflection layer 6 is a ZnS film with a refractive i...

Embodiment 2

[0018] Introduce the preferred embodiment of the four-junction solar cell with anti-reflection film that the present invention proposes below, this four-junction solar cell with anti-reflection film has following structure:

[0019] On the bottom electrode 1 there is a Ge cell 2; on the Ge cell 2 is a strain compensating GaAsP / GaInAs superlattice cell 3; on the strain compensating GaAsP / GaInAs superlattice cell 3 is a GaInAs cell 4; on the GaInAs On the As battery 4 is a GaInP battery 7; wherein, there is a first anti-reflection layer 5 and a second anti-reflection layer 6 between the GaInAs battery 4 and the GaInP battery 7; where there is a third anti-reflection layer 8 on the GaInP battery 7 , the fourth anti-reflection layer 9 and the fifth anti-reflection layer 10, wherein a top electrode 11 is formed on the third anti-reflection layer 8;

[0020] Among them, the first anti-reflection layer 5 is an AlGaInN film with a refractive index of 3.3 and a thickness of 36 nm; the ...

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Abstract

The invention discloses a four-junction solar energy battery with an antireflection film. The four-junction solar energy battery with the antireflection film is characterized in that a germanium (Ge) battery (2) is arranged on a bottom electrode (1), a strain compensation gallium arsenide phosphide (GaAsP) / gallium indium arsenic (GaInAs) superlattice battery (3) is arranged on the Ge battery (2), a GaInAs battery (4) is arranged on the strain compensation GaAsP / GaInAs superlattice battery (3), and a gallium indium phosphide (GaInP) battery (7) is arranged on the GaInAs battery (4). A first antireflection layer (5) and a second antireflection layer (6) are arranged between the GaInAs battery (4) and the GaInP battery (7). The GaInP battery (7) is provided with a third antireflection layer (8), a fourth antireflection layer (9) and a fifth antireflection layer (10). A top electrode (11) is formed on the third antireflection layer (8).

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a four-junction solar cell with an antireflection film. Background technique [0002] A solar cell is an optoelectronic device that converts light energy into electrical energy. For a solar cell, a single-junction solar cell can only cover and utilize sunlight in a certain wavelength range. Generally, a variety of semiconductor materials with different band gaps are combined to form a multi-junction solar cell. [0003] At present, in lattice-matched GaInP / GaAs / Ge triple-junction solar cells, the maximum photoelectric conversion efficiency can reach 32% under the condition of no concentration. However, during the photoconversion process of the solar cell, the loss of reflection reduces the number of incident photons per unit area of ​​the solar cell, resulting in a decrease in the current density of the solar cell, thereby affecting the energy conversion ef...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/078
CPCY02E10/50
Inventor 梅欣张俊
Owner LIYANG CITY PRODIVITY PROMOTION CENT