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Wafer to wafer connection structure

A technology of bonding structure and wafer, applied in the direction of electrical components, electric solid-state devices, circuits, etc., can solve problems such as inability to align

Active Publication Date: 2013-06-26
HIMAX TECH LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At the same time, its structural design can also overcome the problem that the two chips cannot be aligned due to the difference in thermal expansion and contraction.

Method used

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  • Wafer to wafer connection structure

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Embodiment Construction

[0031] now refer to image 3 , which depicts a top view and a cross-sectional view of two first wafers and second wafers to be docked before bonding according to an embodiment of the present invention. Such as image 3 As shown, the wafer-to-wafer bonding structure of the present invention is formed by bonding a first wafer 320 and a second wafer 340 . The first chip 320 has a first surface 322 on which a plurality of first grooves 324 and various components and circuits (not shown) are disposed. In this embodiment, more than one first groove 324 may be respectively provided on the transverse diameter X1 and the longitudinal diameter Y1 of the first wafer 320 . Wherein, the first trench 324 provided on the lateral diameter X1 of the first wafer 320 has a length parallel to the lateral diameter X1 and a width parallel to the longitudinal diameter Y1, and the groove 324 provided on the longitudinal diameter Y1 of the first wafer 320 The first trench 324 has a length parallel ...

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Abstract

The invention discloses a wafer to wafer connection structure which comprises a first wafer, a second wafer and a plurality of embedded parts. A plurality of first grooves are respectively arranged on the first wafer on the transverse diameter and the longitudinal diameter. A plurality of first grooves are respectively arranged on the second wafer on the transverse diameter and the longitudinal diameter. The first wafer and the second wafer are connected so that the transverse diameter and the longitudinal diameter of the first wafer are respectively overlapped with the transverse diameter and the longitudinal diameter of the second wafer, and the first grooves and the second grooves have an overlapped area. The embedded parts are arranged in the first grooves and the second grooves which are both located in the overlapped area.

Description

technical field [0001] The present invention relates generally to a wafer-to-wafer bonding structure, and more particularly to a wafer-to-wafer bonding structure having grooves and special alignment features. Background technique [0002] Epitaxy and coating processes are widely used in the manufacture of semiconductor components and optoelectronic components. Generally speaking, to grow another different material on one material, the degree of matching between the atomic lattices of the two must be considered. If the lattice size difference between the two materials is too large, there will inevitably be A stress field is generated at the interface, and most of the defects or dislocations will be concentrated at this type of interface, which will lead to problems such as threading dislocation in the subsequent coating film or epitaxial structure, which will seriously affect the performance of the device. In recent years, wafer-to-wafer bonding technology has been developed...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/544
Inventor 薛全钦
Owner HIMAX TECH LTD
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