Method for manufacturing polycrystalline silicon solar cells with selective emitters

A solar cell and emitter technology, applied in the field of solar energy, can solve the problems of poor square resistance uniformity and poor cell efficiency of ultra-polycrystalline silicon solar cells, and achieve the effects of convenient subsequent cleaning, simple and easy preparation method, and shortened process time

Active Publication Date: 2015-07-15
CSI CELLS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the square resistance uniformity of the selective emitter polycrystalline silicon solar cell obtained by the above method is poor, and the cell efficiency is poor

Method used

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  • Method for manufacturing polycrystalline silicon solar cells with selective emitters
  • Method for manufacturing polycrystalline silicon solar cells with selective emitters

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Embodiment 1

[0027] A method for preparing a selective emitter polycrystalline silicon solar cell includes the following steps:

[0028] (1) Cleaning and texturing;

[0029] (2) Growing active dopants on silicon wafers;

[0030] (3) Place the silicon wafer in a diffusion furnace, and cool it down to 530°C at a cooling rate of 3~5°C / min, and pass in N 2 , The N 2 The flow rate is 15 slm;

[0031] (4) After the temperature stabilizes, pass in N 2 And O 2 For oxidation, the oxidation time is 40 min; the N 2 Flow rate is 5 slm, O 2 The flow rate is 5000 sccm;

[0032] (5) Raise the temperature to 865°C at a heating rate of 8°C / min. After the temperature stabilizes, pass in the phosphorus source gas for diffusion; the phosphorus source gas is phosphorus oxychloride with a flow rate of 1000 sccm, O 2 The flow rate is 600 sccm, N 2 The flow rate is 20 slm and the diffusion time is 10 min;

[0033] (6) Keep the temperature of the above step (5), stop the phosphorus source, and introduce N 2 And O 2 Carry out...

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Abstract

The invention discloses a method for manufacturing polycrystalline silicon solar cells with selective emitters. The method includes steps of (1), cleaning silicon wafers and etching textures of the silicon wafers; (2), growing active doping agents; (3), placing the silicon wafers in a diffusion furnace and cooling the diffusion furnace until the temperature of the diffusion furnace ranges from 500 DEG C to 550 DEG C; (4), feeding N<2> and O<2> into the diffusion furnace to perform oxidization after the temperature of the diffusion furnace is stable; (5), heating the diffusion furnace at the speed ranging from 5 DEG C / min to 10 DEG C / min until the temperature of the diffusion furnace ranges from 850 DEG C to 870 DEG C and feeding gas with a phosphorus source into the diffusion furnace to perform diffusion after the temperature of the diffusion furnace is stable; (6), keeping the temperature of the diffusion furnace unchanged, feeding N<2> and O<2> into the diffusion furnace to perform constant-temperature propulsion; (7), cooling and discharging; and (8), cleaning, etching, removing edges, coating anti-reflection films, performing screen printing and sintering so as to obtain the polycrystalline silicon solar cells with the selective emitters. The novel method for manufacturing the polycrystalline silicon solar cells with the selective emitters has the advantages that the manufacturing cost is low, the manufacturing time is short, and the method is compatible to an existing standard cell process and has an industrialization prospect.

Description

Technical field [0001] The invention relates to a method for preparing a selective emitter polycrystalline silicon solar cell, and belongs to the technical field of solar energy. Background technique [0002] Since entering this century, the photovoltaic industry has become the fastest growing high-tech industry in the world. Among various types of solar cells, crystalline silicon (monocrystalline, polycrystalline) solar cells occupy an extremely important position, and currently occupy more than 75% of the photovoltaic market. Crystalline silicon solar cells use the photovoltaic effect of the p-n junction to achieve photoelectric conversion. From a development point of view, crystalline silicon solar cells will still dominate for a long time in the future. [0003] The existing crystalline silicon solar cell manufacturing process includes: surface cleaning and texturing, diffusion, cleaning and etching to remove edges, anti-reflection coating, screen printing, sintering to form o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 张为国龙维绪王栩生章灵军
Owner CSI CELLS CO LTD
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