Method for manufacturing polycrystalline silicon solar cells with selective emitters
A solar cell and emitter technology, applied in the field of solar energy, can solve the problems of poor square resistance uniformity and poor cell efficiency of ultra-polycrystalline silicon solar cells, and achieve the effects of convenient subsequent cleaning, simple and easy preparation method, and shortened process time
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[0027] A method for preparing a selective emitter polycrystalline silicon solar cell includes the following steps:
[0028] (1) Cleaning and texturing;
[0029] (2) Growing active dopants on silicon wafers;
[0030] (3) Place the silicon wafer in a diffusion furnace, and cool it down to 530°C at a cooling rate of 3~5°C / min, and pass in N 2 , The N 2 The flow rate is 15 slm;
[0031] (4) After the temperature stabilizes, pass in N 2 And O 2 For oxidation, the oxidation time is 40 min; the N 2 Flow rate is 5 slm, O 2 The flow rate is 5000 sccm;
[0032] (5) Raise the temperature to 865°C at a heating rate of 8°C / min. After the temperature stabilizes, pass in the phosphorus source gas for diffusion; the phosphorus source gas is phosphorus oxychloride with a flow rate of 1000 sccm, O 2 The flow rate is 600 sccm, N 2 The flow rate is 20 slm and the diffusion time is 10 min;
[0033] (6) Keep the temperature of the above step (5), stop the phosphorus source, and introduce N 2 And O 2 Carry out...
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