SIW (substrate integrated waveguide) resonator and processing method thereof

A processing method and resonator technology, applied in the direction of resonators, waveguide devices, electrical components, etc., can solve problems such as insufficient circuits, achieve the effects of reducing processing costs, increasing the selection range, and improving the degree of integration

Active Publication Date: 2013-06-26
XIAN INSTITUE OF SPACE RADIO TECH
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  • Abstract
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Problems solved by technology

[0003] With the in-depth research on substrate-integrated waveguides, the application limitations of substrate-integrated waveguides are also fully exposed. This kind of planar p

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  • SIW (substrate integrated waveguide) resonator and processing method thereof
  • SIW (substrate integrated waveguide) resonator and processing method thereof
  • SIW (substrate integrated waveguide) resonator and processing method thereof

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Embodiment Construction

[0024] The present invention will be further introduced below in conjunction with the accompanying drawings.

[0025] The SIW resonator of the present invention is a basic unit for forming a filter, a multiplexer and an oscillator, and its unloaded Q value directly corresponds to the frequency selection characteristics of the filter and the oscillator. If the unloaded Q value can be further improved, some passive narrowband devices with high out-of-band suppression can also be designed with planar circuits, which will play a role in promoting circuit integration and miniaturization and light weight of spaceborne components.

[0026] like figure 1 , 2 As shown, the SIW resonator of the present invention is obtained by expanding the thickness of a single SIW resonator, and an intermediate air layer is arranged inside it, and the intermediate air layer is located in the middle of the substrate of the SIW resonator. By adding this intermediate air layer, the unloaded quality fac...

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Abstract

The invention discloses an SIW (substrate integrated waveguide) resonator. An intermediate air layer is arranged in the SIW resonator. Factors adverse to Q values are reduced by the aid of the intermediate air layer. No-load quality factor Q value is increased. The invention further provides a processing method of the SIW resonator. The processing method includes steps of increasing thickness of a single SIW resonator; and setting the intermediate air layer in the SIW resonator after the thickness is increased. The intermediate air layer is arranged in the SIW resonator, and accordingly, Q value of the SIW resonator is increased by changing the structure of the SIW resonator.

Description

technical field [0001] The invention belongs to the field of microwave planar circuit design, relates to an SIW resonator, in particular to an SIW resonator with an intermediate air layer, and a processing method for the resonator. Background technique [0002] Substrate-integrated waveguide (SIW) is a microwave miniaturization technology that has become popular in the world in recent years, and has attracted great attention from the academic community. The planar passive circuit designed with this technology can increase its unloaded Q value from tens to hundreds, which is an order of magnitude higher, and the volume and weight are acceptable; more importantly, these circuits can be seamless with other planar circuits Connection, low cost and convenient processing. [0003] With the in-depth research on substrate-integrated waveguides, the application limitations of substrate-integrated waveguides are also fully exposed. This kind of planar passive circuit can achieve good...

Claims

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Application Information

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IPC IPC(8): H01P7/00H01P11/00
Inventor 禹旭敏张群崔宗涛李秋强孙鸿洋
Owner XIAN INSTITUE OF SPACE RADIO TECH
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