Check patentability & draft patents in minutes with Patsnap Eureka AI!

Method for detecting interlayer adhesion and method for making test piece

A technology for detecting layers and adhesion, applied in the preparation of test samples, semiconductor/solid-state device testing/measurement, measuring devices, etc., can solve the problem of silicon substrate 100 fracture, low reproducibility of test results, and inability to adhere to thin films. Adhesion measurement and other issues

Active Publication Date: 2015-09-09
SEMICON MFG INT (SHANGHAI) CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the actual testing process, some problems often occur
For example, if the applied force 130 is too small, the silicon substrate 105 can only be broken, or the epoxy resin 104 can only be delaminated from its upper and lower layers, but not enough to cause delamination between the first film 101 and the second film 102. (because the adhesion force of the latter is greater than the former); if the force 130 is slightly larger, it may cause the silicon substrate 100 to break
These situations will lead to inaccurate determination of the adhesion force between films and lead to low reproducibility of test results

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for detecting interlayer adhesion and method for making test piece
  • Method for detecting interlayer adhesion and method for making test piece
  • Method for detecting interlayer adhesion and method for making test piece

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042]In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0043] In order to thoroughly understand the present invention, detailed steps and structures will be presented in the following description, so as to explain how the present invention solves the problem that the interlayer adhesion measurement is prone to failure in the prior art. Obviously, the practice of the invention is not limited to specific details familiar to those skilled in the semiconductor arts. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments besides these detail...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a method for detecting interlayer adhesion force based on the four-point bending method and a method for manufacturing a detection test piece. The detection method comprises: providing the to-be-detected test piece, which is formed with a first dielectric film and a second dielectric film in order; forming a first groove on the second dielectric film till the surface of the first dielectric film; filling metal in the first groove, and flattening the metal surface with the second dielectric film by a chemical machinery planarization; growing oxide film on the second dielectric film and forming a second groove on the oxide film at a position corresponding to the first groove, wherein the depth of the second groove is no bigger than the thickness of the oxide film; bonding the oxide film with the substrate, and forming an open groove on the substrate at a position corresponding to the first groove and the second groove to form the detection test piece; and using the four-point bending method to test the adhesion force between the first dielectric film and the second dielectric film.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for detecting interlayer adhesion and a method for making a test piece. Background technique [0002] In the semiconductor manufacturing process, it is often necessary to form multilayer films, and it is required to ensure that the adhesion between the films (ie, interlayer adhesion) reaches the desired target to ensure the reliability and durability of the device. [0003] Parameters affecting the adhesion between films include the materials used and various process conditions. In order to make the adhesion meet the requirements, it is necessary to make a test piece containing at least two layers of the film to be tested, detect its adhesion by a certain method, and optimize the parameters according to the test results to achieve the final goal. These parameters and materials can then be applied to the actual process to ensure the quality of the fin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N19/04G01N1/28H01L21/66H01L21/02
Inventor 周鸣
Owner SEMICON MFG INT (SHANGHAI) CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More