Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor element with passivation segment and manufacturing method thereof

A semiconductor and segment technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., to solve problems such as semiconductor wafer warpage

Inactive Publication Date: 2013-07-10
ADVANCED SEMICON ENG INC
View PDF8 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the inconsistency of the material will cause the warpage of the semiconductor wafer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor element with passivation segment and manufacturing method thereof
  • Semiconductor element with passivation segment and manufacturing method thereof
  • Semiconductor element with passivation segment and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] reference figure 1 , Showing a schematic cross-sectional view of an embodiment of the semiconductor device of the present invention. The semiconductor device 1 includes a die 10, at least one conductive via 14 formed in the die 10, at least one via contact 20, at least one external contact 22, and a redistribution layer (Redistribution Layer, RDL) 33 and at least one UBM contact (UBM Contact) 38.

[0015] The die 10 has an active surface 101 and an inactive surface 102. In this embodiment, the active surface 101 is also the first surface 101, and the inactive surface 102 is also the second surface 102. The die 10 can be made of a semiconductor material (for example: silicon, germanium, gallium arsenide, etc.). An integrated circuit (not shown in the figure) is formed on the semiconductor die 10. Preferably, the integrated circuit is adjacent to the first surface 101. The active surface 101 has a plurality of the channel contacts 20, the channel contacts 20 are located on...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a semiconductor element and a semiconductor element technology. The semiconductor element comprises a crystalline grain, a first passivation layer, a metal wiring layer and a second passivation layer. The first passivation layer is disposed on the crystalline grain and is provided with a plurality of first segments. One of the first segments has a first width. The metal wiring layer is disposed on the first passivation layer and is provided with a plurality of second segments. One of the second segments has a second width. The second passivation layer is disposed on the metal wiring layer and is provided with a plurality of third segments. One of the third segments has a third width. The second width is equal to or small than the first width and the third width. Therefore, warping can be reduced.

Description

Technical field [0001] The present invention relates to a semiconductor element, a semiconductor packaging structure and a semiconductor process. In detail, it relates to a semiconductor element having a patterned passivation layer, a semiconductor packaging structure having the semiconductor element, and a semiconductor process of the semiconductor element. Background technique [0002] It is known that semiconductor wafers have at least one passivation layer on one surface thereof to isolate the surface from external electrical and chemical environments. The material of the semiconductor wafer is different from the material of the passivation layer, and it has a different coefficient of thermal expansion (CTE). Therefore, the inconsistency of materials will cause warpage of the semiconductor wafer. [0003] Therefore, it is necessary to solve the above-mentioned problems. Summary of the invention [0004] An embodiment of the present invention relates to a semiconductor device, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/488H01L23/31H01L21/60H01L21/56
CPCH01L2224/16225H01L2224/32225H01L2224/73204H01L2924/00
Inventor 杨国宾王盟仁
Owner ADVANCED SEMICON ENG INC