Unlock instant, AI-driven research and patent intelligence for your innovation.

Silicon carbide powder for producing silicon carbide single crystal and production method thereof

A technology of silicon carbide single crystal and silicon carbide powder, which is applied in the fields of silicon carbide, chemical instruments and methods, carbides, etc., can solve the problems of impurities and low productivity of silicon carbide powder, and achieve high sublimation speed and stable sublimation speed. Effect

Inactive Publication Date: 2015-07-29
NAT INST OF ADVANCED IND SCI & TECH +1
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the silicon carbide powder obtained by the Acheson method has the problem of impurities, and the chemical vapor growth method can obtain high-purity silicon carbide, but there is a problem of low productivity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon carbide powder for producing silicon carbide single crystal and production method thereof
  • Silicon carbide powder for producing silicon carbide single crystal and production method thereof
  • Silicon carbide powder for producing silicon carbide single crystal and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment ）

[0068] Hereinafter, the present invention will be described with reference to examples. In addition, in this example, in order to confirm the effect of the silicon carbide powder of the present invention, an attempt was made to produce a silicon carbide single crystal using the modified Riley method.

[0069] Production of silicon carbide powder

[0070] (Sintered body pulverization method)

[0071]

[0072] As the silicon carbide powder as a raw material, a powder synthesized as follows was used. Metallic silicon (manufactured by Toshiba LSI Co., Ltd., silicon sludge, average particle size 1.0 μm, purity 5N) and acetylene black (Denki Kagaku Kogyo Co., Ltd. manufactured, denka black, average particle size 0.04 μm), mixed in ethanol using a mortar, and then dried to prepare a raw material powder. The raw material powder was put into a graphite crucible, and kept at a temperature of 1900° C. for 2 hours under an argon atmosphere in a graphite heating furnace to obtain a ...

Embodiment 2

[0081] Fill silicon carbide powder (manufactured by Pacific Randon, 15H2 with an average particle size of 0.5 μm) into a graphite mold with an inner diameter of 50 mm. °C and a pressure of 30 MPa for 2 hours to form a silicon carbide sintered body. The density of the resulting sintered body was measured using the size / mass measurement method and was found to be 1.95 g / cm 3 (relative density 60.5%). The prepared silicon carbide sintered body was treated in the same manner as in Example 1 to obtain a silicon carbide powder body. The powder properties obtained are in the same manner as in Example 1 figure 1 shown in .

Embodiment 3

[0083] Silicon carbide powder (manufactured by Sumitomo Osaka Cement Co., Ltd., T-1 average particle size 0.03 μm) was filled into a graphite mold with an inner diameter of 50 mm, and after preliminary molding, a high-frequency induction heating type hot-pressing device was used under an argon atmosphere at a temperature of A silicon carbide sintered body was produced by maintaining at 2200°C and a pressure of 20 MPa for 2 hours. The density of the resulting sintered body was measured using the size / mass measurement method and was found to be 1.37 g / cm 3 (relative density 42.4%). The prepared silicon carbide sintered body was treated in the same manner as in Example 1 to obtain a silicon carbide powder body. The powder properties obtained are in the same manner as in Example 1 figure 1 shown in .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
specific surface areaaaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

A silicon carbide powder for the production of a silicon carbide single crystal has an average particle diameter of 100 μm or more and 700 μm or less and a specific surface area of 0.05 m2 / g or more and 0.30 m2 / g or less. A method for producing a silicon carbide powder for the production of the silicon carbide single crystal including sintering a silicon carbide powder having an average particle diameter of 20 μm or less under pressure of 70 MPa or less at a temperature of 1900° C. or more and 2400° C. or less and in a non-oxidizing atmosphere, thereby obtaining a sintered body having a density of 1.29 g / cm3 or more; adjusting particle size by means of pulverization of the sintered body; and removing impurities by means of an acid treatment.

Description

technical field [0001] The present invention relates to silicon carbide powder for manufacturing silicon carbide single crystal and its manufacturing method. Background technique [0002] Conventionally, as a method for producing a silicon carbide single crystal, there is known a sublimation recrystallization method (modified Riley ( Lely) method) (Non-Patent Document 1). [0003] In addition, it is well known that when a silicon carbide powder containing many impurities is used in the sublimation recrystallization method, many crystal defects are generated due to impurities mixed into the single crystal. [0004] As a method for producing silicon carbide powder, the Acheson method and the chemical vapor phase growth method are known. However, the silicon carbide powder obtained by the Acheson method has the problem of impurities, while the chemical vapor growth method can obtain high-purity silicon carbide but has the problem of low productivity. [0005] Also disclosed ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/36C30B29/36
CPCY10T428/2982C01B31/36C30B23/02C30B29/36C30B35/007C01B32/956C01B32/984C01P2004/60C01P2006/10C01B32/977
Inventor 加藤智久武田雄介村田弘
Owner NAT INST OF ADVANCED IND SCI & TECH