Method of improving shallow trench isolating performance of high-voltage device
A technology of high-voltage devices and shallow trenches, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of device performance impact, increase production cost, serious problems, etc., to slow down high leakage, improve withstand voltage, The effect of improving overall performance
Active Publication Date: 2015-04-29
SHANGHAI HUALI MICROELECTRONICS CORP
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[0007] However, the depth of the grooves finally formed by this invention is the same. Since the depths of the grooves in different regions are the same, it is easy to cause a serious leakage phenomenon in a certain region. will also have some impact
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[0034] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:
[0035] A method for improving the shallow trench isolation performance of a high-voltage structure provided by the present invention specifically includes the following steps:
[0036]Step S1, providing a semiconductor structure with a silicon substrate 100, such as figure 2 As shown: the semiconductor structure includes a high-voltage device region HV and a low-voltage logic region LG. A pad oxide layer 101 and a silicon nitride layer 102 are sequentially grown on the upper surface of a silicon substrate 100 from bottom to top. In an embodiment of the present invention , the material of the silicon substrate 100 is single crystal silicon, and the material of the pad oxide layer 101 is silicon oxide.
[0037] Step S2, growing a first anti-reflection layer 103 on the upper surface of the silicon nitride layer 102, and then coating a layer of phot...
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The invention relates to a manufacturing technology of a semiconductor integrated circuit, in particular to method of improving the shallow trench isolating performance of a high-voltage device. According to the method, two shallow trench isolating regions in different depths are formed in a high-voltage device region and a low-voltage logic region of a semiconductor device respectively by utilizing a photoetching technology and an etching technology for twice, the depth of the shallow trench isolating region in the high-voltage device region is greater than that of the shallow trench isolating region in the low-voltage logic region, so that the problem of high electric leakage of the high-voltage device region is solved, the voltage endurance capability of the high-voltage device and the shallow trench isolating performance of the HV (high-voltage) device are improved, and the overall performances of a product are improved.
Description
technical field [0001] The present invention generally relates to the manufacturing process of semiconductor integrated circuits, more precisely, relates to a method for improving the performance of shallow trench isolation of high-voltage devices. Background technique [0002] In recent years, liquid crystal displays of portable electronic products such as mobile phones and digital cameras have been widely used. More and more large-size displays and large-screen TVs use light-emitting diodes, which can achieve better performance than traditional CRT (Cathode Ray Tube, cathode ray tube) displays and liquid crystal displays in terms of brightness, contrast and power consumption. With the progress and development of CMOS technology, HV CMOS (High Voltage Complementary Metal Oxide Semiconductor, high voltage complementary metal oxide semiconductor) is more and more widely used in high voltage applications, the most important application includes as LCD (Liquid Crystal Display, ...
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IPC IPC(8): H01L21/762
Inventor 范洋洋孙昌王艳生
Owner SHANGHAI HUALI MICROELECTRONICS CORP