Unlock instant, AI-driven research and patent intelligence for your innovation.

TEM sample preparation method

A sample, thickness direction technology, applied in the preparation of test samples, gaseous chemical plating, coating, etc., can solve the problem of thin film part crooked and bent

Active Publication Date: 2013-08-14
HITACHI HIGH TECH SCI CORP
View PDF5 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, there is a problem that even when a slit is formed therein, the thin film portion is crooked and bent, as in the case of the prior art described above.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • TEM sample preparation method
  • TEM sample preparation method
  • TEM sample preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] A TEM sample preparation method according to an exemplary embodiment of the present invention will be described below.

[0018] Such as figure 1 As shown in , the focused ion beam apparatus for TEM sample preparation in the exemplary embodiment includes a FIB column 2 and a sample chamber 3 . The FIB column 2 is capable of irradiating a sample 7 accommodated in the sample chamber 3 with an ion beam 9 .

[0019] The focused ion beam device further includes a secondary electron detector 4 . Secondary electron detector 4 is capable of detecting secondary electrons generated from sample 7 by irradiation of ion beam 9 .

[0020] The focused ion beam apparatus further includes a sample stage 6 on which a sample 7 is placed. The sample stage 6 can be tilted to change the incident angle of the ion beam 9 to the sample 7 . Movement of the sample stage 6 can be controlled by the sample stage control unit 16 .

[0021] The focused ion beam apparatus further includes a FIB con...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A TEM sample preparation method including: placing a thin sample on a sample holder so that a first side surface of the thin sample which is closer to a desired observation target is opposed to a focused ion beam column; setting a processing region, which is to be subjected to etching processing by a focused ion beam so as to form a thin film portion including the observation target and having a thickness direction substantially parallel to a thickness direction of the thin sample, to a region of the first side surface that is adjacent to the thin film portion; and performing the etching processing to a portion of the thin sample extending from the first side surface thereof to a front surface thereof by irradiating the processing region with the focused ion beam from the focused ion beam column.

Description

technical field [0001] The present invention relates to a method of preparing a TEM sample by etching treatment using a focused ion beam. Background technique [0002] In the prior art, transmission electron microscope (TEM) observation is known as observation of minute regions in a sample to analyze defects in semiconductor devices or for other purposes. In TEM observation, when preparing a sample for obtaining a transmission electron image, it is necessary to prepare a TEM sample having a thin film portion having a thickness allowing electron beams to pass therethrough at a part thereof. [0003] In recent years, as a method of preparing a TEM sample, a TEM sample preparation method using a focused ion beam has been used. In this method, the peripheral portion of the sample is etched to leave a portion of the sample that includes the desired observation area. Then, the remaining portion is subjected to an etching process until the remaining portion has a thickness allowi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N1/32
CPCH01J37/00G01N1/28C23C16/486H01J2237/31745G01N1/32
Inventor 铃木秀和中谷郁子
Owner HITACHI HIGH TECH SCI CORP