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A method for identifying a memory cell and a sense amplifier

A technology of a sense amplifier and a storage unit, applied in the field of the sense amplifier, can solve the problem of slow reading speed of the sense amplifier, and achieve the effects of easy identification, obvious voltage change, and improved threshold

Active Publication Date: 2016-09-14
GIGADEVICE SEMICON (BEIJING) INC
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  • Application Information

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Problems solved by technology

[0005] The application provides an identification method of a storage unit and a sensitive amplifier to solve the problem of slow read speed of the sensitive amplifier

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  • A method for identifying a memory cell and a sense amplifier
  • A method for identifying a memory cell and a sense amplifier
  • A method for identifying a memory cell and a sense amplifier

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Embodiment Construction

[0038] In order to make the above objects, features and advantages of the present application more obvious and comprehensible, the present application will be further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0039] In order to improve the read speed of the sense amplifier, first analyze the read process of the sense amplifier when the same read voltage is applied to the memory cell and the reference cell, and find out the reason for the slow read speed.

[0040] refer to figure 1 , is the structure diagram of a traditional current-mode sense amplifier.

[0041]In the figure, RC is a reference cell (Reference Cell), and MC is a storage cell (Memory Cell). VML is the same read voltage applied to the gates of RC and MC respectively. On the respective bit line branches of RC and MC, PM represents a PMOS transistor, and NM represents an NMOS transistor.

[0042] Among them, PM10 and PM20 are PMOS switches, PM1...

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Abstract

The application provides an identification method of a memory cell and a sense amplifier so as to solve the problem that reading speed of a sense amplifier is slow. The method comprises the following steps: by applying different voltage readings on a memory cell and a reference unit, difference of current between a memory cell subcircuit and a reference unit subcircuit is increased; current on the reference unit subcircuit is mirrored to the memory cell subcircuit and the charge / discharge process is generated on the memory cell subcircuit; and during the charge / discharge process, current on the memory cell subcircuit is red, the red current is compared with a threshold, and whether the memory cell is in an erased state or a programmed state is determined based on the comparison result. According to the application, reading speed of the sense amplifier is raised; in addition, voltage change on the memory cell subcircuit is more obvious by the mode of boosting current difference, and it is easier to identify the state of the memory cell. Thus, the identification method provided by the invention is also used to raise threshold of the sense amplifier.

Description

technical field [0001] The present application relates to integrated circuit technology, in particular to a storage unit identification method and a sensitive amplifier. Background technique [0002] In memories such as flash, the sense amplifier (Sense Amplifier) ​​is a very important circuit, because it is necessary to read the data of the storage unit (cell) in the memory no matter in the process of reading or writing the memory, and then it is necessary to Sensitive amplifiers are used. Therefore, the main function of the sense amplifier is to detect the tiny current difference between the memory cell and the reference cell, thereby identifying the state of the data bit stored in the memory cell, and judging whether the memory cell is in an erased state (erased cell ) or programmed state (programmed cell). [0003] In the prior art, in order to obtain the state of the data bit stored in the memory cell, it is necessary to apply the same read voltage to the memory cell ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/22G11C7/06
Inventor 程莹
Owner GIGADEVICE SEMICON (BEIJING) INC