Device and method for measuring power-lossing resistance value of memristor

Abstract

The invention belongs to the field of a measuring technology, and relates to a device and method for measuring power-lossing resistance value of a memristor. The device and method for measuring the power-lossing resistance value of the memristor are characterized in that a pulse voltage source, a variable resistor and the memristor are mutually connected in a measuring circuit in series. The total length of the memristor is assumed to be D, and thickness change of a doping layer is assumed to be delta w. If the delta is a set error parameter, change of resistance value of the memristor accords with the following formula, wherein Ron is a conduction resistance value when w is equal to D, Roff is the resistance value when w is equal to zero, and epsilon is a set error parameter. The smaller the amplitude U and width d of a pulse voltage source are, the smaller the change of thickness of the doping layer in the memristor in the measuring process is. According to the device, a traditional direct current power source is replaced by the pulse voltage source, so the influence on the resistance value of the memristor can be reduced in the measuring process. The amplitude and the width of pulse voltage signals are adjustable, and the requirements for measuring accuracy and circuit response speed can be met.

Description

technical field [0001] The invention belongs to the technical field of measurement, and relates to a device and a method for measuring the power-off resistance value of a memristor. Background technique [0002] Memristors are the fourth basic circuit element after resistors, inductors, and capacitors. In 1971, Professor Cai Shaotang proposed the concept of memristors. It was not until 2008 that the existence of memristors was confirmed by the HP laboratory, which set off an upsurge of memristor-related research. The resistance value of a memristor reflects the relationship between the flux linkage and charge passing through the device, and its resistance value M can be written as the charge q or flux linkage flowing through the device The function. When the charge flows in one direction, the resistance value increases, and when the charge moves in the opposite direction, the resistance value decreases. [0003] According to the memristor model of the HP laboratory, duri...

AI Technical Summary

Problems solved by technology

If the traditional method of measuring resistance is adopted, such as ohmmeter method, voltammetry method or bridge balance method, etc., due to the effect of an external DC power supply in the circuit, the resistance value of the memristor will change with the measurement process. Large changes, so it is impossible to accurately measure the dead resistance value of a real memristor

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