46results about How to "Eliminate the effect of resistance" patented technology

Provided are a Micro Electro-Mechanical System (MEMS) package and a method of packaging the MEMS package. The MEMS package includes: a MEMS device including MEMS structures formed on a substrate, first pad electrodes driving the MEMS structures, first sealing parts formed at an edge of the substrate, and connectors formed on the first pad electrodes and the first sealing parts; and a MEMS driving electronic device including second pad electrodes and second sealing parts respectively corresponding to the first pad electrodes and the first sealing parts to be sealed with and bonded to the MEMS device through the connectors to form an air gap having a predetermined width.

The invention relates to a ternary-system chip negative temperature coefficient thermal resistor, which uses manganese nitrate, nickel nitrate and cobalt nitrate as raw materials and ammonium bicarbonate as precipitator, is prepared by a liquid-phase co-precipitation method, and comprises the following steps: improving the agglomeration phenomenon of the precipitated particles by controlling the molar ratio of nitrate to precipitator ammonium bicarbonate, the reaction temperature and the pH value, washing out the impurities in the product by modes of water washing and alcohol washing to obtain superfine and uniform thermal resistor powder, drying, calcining to obtain evenly dispersed mixed oxide powder of Mn, Ni and Co, briquetting and moulding the powder, isopressing, sintering under high temperature, slicing by a semiconductor to obtain a thermal resistor chip, and encapsulating with epoxy resin to obtain the ternary-system chip negative temperature coefficient thermal resistor with high performance which has the characteristics of good uniformity, high stability, capability of repeatability and interconversion, and is suitable for temperature measurement, control and line compensation in the household appliance field such as refrigerators, air conditioners and the like.

The invention discloses a high-temperature micro-pressure pressure sensor. The high-temperature micro-pressure pressure sensor comprises a sensor chip, a left side compensation circuit, a right side compensation circuit, a power supply electrode pair, a signal detection and extraction electrode pair, a bottom supporting layer, and a peripheral package; the sensor chip comprises overlapped from bottom to top, a silicon bottom layer, a silicon dioxide insulating layer, a silicon carbide top layer, and an uppermost cavity sealing layer; the bottom supporting layer is positioned at the bottom of the sensor chip, and an air vent hole is formed in the middle of the bottom supporting layer; and the peripheral package comprises a stainless steel bottom and a plastic outer casing, and the stainlesssteel bottom and the outer casing are combined to cover the sensor chip. On the basis of an MEMS technology, according to the structure of the high-temperature micro-pressure pressure sensor, sensitivity, linearity, and accuracy of the sensor under a high-temperature environment are greatly improved, high accuracy measurement of air pressure within 0 to 1 kPa under a high-temperature micro-pressure condition can be achieved. The invention further discloses a manufacturing method and a measuring system of the high-temperature micro-pressure pressure sensor.

The invention discloses a memristor-based bandwidth adjustable low-pass filter circuit and an operation method thereof. The circuit is composed of a first-order active low-pass filter circuit including a memristor and a programming circuit including a memristor. The threshold voltage characteristics of the memristor are utilized, the working modes of the memristor are divided into an analog working mode and a programming working mode, and the bandwidth of the filter circuit is changed by changing the resistance value of the memristor. The programming circuit is composed of the memristor, four NMOS tubes and four PMOS tubes. The first-order active filter circuit is composed of the memristor, a capacitor and an operational amplifier. The invention also discloses a memristor-based bandwidth adjustable high-pass filter circuit and an operation method thereof. The circuit has the advantages that the active filter circuit is low in input impedance and high in output impedance, and the programming circuit has the advantages of being small in volume occupation, high in degree of integration, low in power consumption and easy to operate so that the circuit is suitable for signal filtering processing.

The invention discloses drill steel BG22SiMnNi2CrMoA and a preparation method thereof. The drill steel BG22SiMnNi2CrMoA comprises, by weight percentage, 0.19-0.22% of C, 1.35-1.65% of Si, 1.25-1.45% of Mn, smaller than or equal to 0.012% of P, smaller than or equal to 0.010% of S, 0.25-0.35% of Cr, 1.70-1.90% of Ni, 0.35-0.40% of Mo, smaller than or equal to 0.15% of Cu, and the balance Fe and inevitable impurities. The drill steel BG22SiMnNi2CrMoA is good in component uniformity and low in segregation degree; and the preparation method solves the problems that existing steel for producing rock drilling tools is mostly produced by adopting die casting or electroslag remelting, the finished steel rate is low, cost is high, the yield is small, and the production rhythm is slow.

The invention discloses a temperature measuring system with high precision and strong interference resistance and a method thereof, and the temperature measuring system consists of temperature sensors and a controlling computer, and is characterized in that the temperature sensors are a plurality of temperature sensors that are respectively arranged on each part of a large-scale astronomical telescope, outputs of the temperature sensors are respectively connected with each temperature survey meter, an analog signal amplifying circuit, an analog-to-digital converter, a data acquisition system, a temperature displaying device and a serial communication circuit are respectively arranged inside each temperature survey meter, which is remotely connected with the controlling computer through the serial communication circuit and the Ethernet. The temperature measuring system adopts the high-precision temperature sensors and temperature survey meters as well as the method that combines hardware with software, thus improving the interference resistant capacity of the system, eliminating power frequency interference and random interference and satisfying the requirement of remote data transmission; simultaneously the temperature measuring system utilizes the Ethernet technique for sampling multi-way temperature data, thus recording and storing measured temperature data in real time and providing reliable foundation for improving astronomical seeing in astronomical observation.

The invention relates to a heat pump laboratory temperature and humidity control and energy dissipation efficiency testing system which comprises an upper computer MCGS, a lower computer PLC, a temperature and humidity detecting module, a temperature adjusting module, a humidity adjusting module, a tested air source heat pump set and a heat pump power supply management module. The upper computer MCGS and the lower computer PLC are connected. The temperature and humidity detecting module is connected with the lower computer PLC through an analog quantity collector. The temperature adjusting module is connected with the lower computer PLC. The humidity adjusting module is connected with the lower computer PLC. The tested air source heat pump set is connected with the heat pump power supply management module which is connected with the upper computer MCGS. A water inlet temperature detector, a water outlet temperature detector and a water flow detector are arranged between the tested air source heat pump set and the analog quantity collector. The system has the advantages of being stable, reliable, easy to use and low in price, the energy dissipation efficiency testing system is added, the system is comprehensive and complete, and practicability is strong.

The invention belongs to the field of a measuring technology, and relates to a device and method for measuring power-lossing resistance value of a memristor. The device and method for measuring the power-lossing resistance value of the memristor are characterized in that a pulse voltage source, a variable resistor and the memristor are mutually connected in a measuring circuit in series. The total length of the memristor is assumed to be D, and thickness change of a doping layer is assumed to be delta w. If the delta is a set error parameter, change of resistance value of the memristor accords with the following formula, wherein Ron is a conduction resistance value when w is equal to D, Roff is the resistance value when w is equal to zero, and epsilon is a set error parameter. The smaller the amplitude U and width d of a pulse voltage source are, the smaller the change of thickness of the doping layer in the memristor in the measuring process is. According to the device, a traditional direct current power source is replaced by the pulse voltage source, so the influence on the resistance value of the memristor can be reduced in the measuring process. The amplitude and the width of pulse voltage signals are adjustable, and the requirements for measuring accuracy and circuit response speed can be met.

The invention discloses high-temperature bolt steel BG25Cr2MoVA and a preparation method thereof. The high-temperature bolt steel BG25Cr2MoVA comprises the following components of, by weight, 0.23-0.27% of C, 0.20-0.35% of Si, 0.54-0.62% of Mn, 0-0.015% of P, 0-0.012% of S, 1.64-1.72% of Cr, 0.28-0.32% of Mo, 0.20-0.24% of V, 0-0.15% of Ni, 0-0.15% of Cu, 0.020-0.040% of Alt, and the balance Fe and inevitable impurities. The high-temperature bolt steel BG25Cr2MoVA is high in steel purity degree, resistant to high temperature and fatigue, and stable in mechanical property. The preparation method is simple and practical, and the technology is stable.

The invention relates to a preparation method of a self-humidifying membrane electrode for a fuel cell. The preparation process of the membrane electrode comprises the following steps: pretreating a proton exchange membrane; preparing an anode hydrophilic catalytic layer; preparing a cathode catalyst layer; respectively laminating gas diffusion layers to prepare the self-humidifying membrane electrode; wherein the anode hydrophilic material chitin can play a good role in water retention, moisture generated by reaction in the cathode catalyst layer is absorbed and retained, the proton exchange membrane is fully wetted, and good proton conduction capability of the proton exchange membrane is kept; the self-humidifying membrane electrode can have excellent performance under a low-humidity condition, the influence of adding hydrophilic substances on the electrical conductivity and resistance of the electrode is reduced, and the preparation process of the membrane electrode is simplified.

The invention discloses a silicon carbide MOSFET device integrated with an SBD and a preparation method of the silicon carbide MOSFET device. The silicon carbide MOSFET device comprises a substrate, an N-epitaxial layer, a P well region, a P + region of a junction field effect region, a P + region and an N + region of a source groove region, a first ohmic contact metal layer, a first Schottky contact metal layer, a second ohmic contact metal layer and a second Schottky contact metal layer. The P + region of the junction field effect region is positioned on one side, far away from the N + region, of the P well region; the second ohmic contact metal layer covers one surface, deviating from the N-epitaxial layer, of the P + region of the junction field effect region; the first Schottky contact metal layer is located on the side, away from the P well region, of the second ohmic contact metal layer. And the second Schottky contact metal layer is arranged on one side, deviating from the P + region of the junction field effect region, of the second ohmic contact metal layer, and is parallel to the P + region of the junction field effect region. The source contact resistance can be reduced, the through-current capability of the silicon carbide device is improved, and the reliability of the silicon carbide device is improved.

The invention discloses a DC-DC module power supply which comprises an enclosure and a circuit mainboard arranged in the enclosure, the circuit mainboard comprises a primary-side circuit and a secondary-side circuit, the primary-side circuit comprises a power conversion circuit, a primary-side driving circuit and a primary-side control circuit, the power conversion circuit adopts a high-frequency power switch, an input DC voltage of 185-340V DC is converted into a 9V low-voltage DC output voltage by a transformer, the secondary-side circuit comprises a synchronous rectification circuit, a secondary-side driving circuit, a secondary-side control circuit and an isolation switch, the synchronous rectification circuit adopts a synchronous rectification switch for synchronous rectification, a low-voltage power pulse is converted into a smooth 9V DC through an output filter, and the smooth 9V DC is output through an anode confluence structure and a cathode confluence structure. The mainboard is reasonable in arrangement and compact in structure, has the advantages of small volume, high reliability, good heat dissipation performance, high anti-interference capability, high isolation and the like, and is mainly applicable for the fields such communication, aeronautics and astronautics and military.

The invention belongs to the technical field of ball-milling steel ball manufacturing, and relates to steel BG80MnCr for steel balls of a ball mill and a preparation method of the steel. An electric furnace continuous casting production process is adopted; the technological process comprises the following steps of blast furnace molten iron preparation, molten iron pretreatment, 50 t electric arc furnace smelting, refining furnace LF, vacuum degassing VD, casting of 235*265 medium square billets, stepping beam furnace heating, high-pressure water descaling, rolling with an 800 roughing mill, rolling with a continuous rolling unit, slow cooling, finishing, flaw detection, inspection and warehousing. The invention provides a high-density and high-purity ball-milled steel smelting technology,and the purity of the steel is effectively controlled.

The invention discloses a 5G cable resistant to bending, and belongs to the technical field of cables. The cable comprises cable cores, a polyethylene outer protective layer, an insulating protectivelayer, a shielding layer and wires. The exterior of the cable is provided with a polyethylene outer protection layer which plays a role in protection. Each cable core comprises a conductor, an insulating protective layer wrapping the conductor, and a shielding layer sleeving the insulating protective layer. An inner sheath is arranged on the center line of the cable, an outer sheath is sleeved outside the inner sheath, the cable cores are arranged between the inner sheath and the outer sheath at equal intervals, wherein the number of the cable cores is at least three, a first buffer layer is sleeved outside the outer sheath, and first support ring bodies are arranged on the periphery of the first buffer layer at equal intervals. Through the arrangement of the bending-resistant structure, the bending-resistant performance of the cable is effectively enhanced, so the influence on the resistance of a wire in the cable due to poor elastic reset effect after the cable is bent is reduced.

The invention discloses a band-gap reference trimming circuit suitable for low voltage. The circuit comprises a band-gap reference trimming circuit, an oscillator circuit, a voltage detection circuit, a charge pump circuit and a logic circuit. On the basis that the MOS switch tube is used for controlling and trimming the band-gap reference voltage, the oscillator circuit, the charge pump circuit, the power supply switching circuit and the like are introduced, under the condition that the input power supply VDD is low, the control voltage of the MOS switch tube is improved, it is ensured that the MOS switch tube can be fully switched on, the influence of the on-resistance on the resistance in the band-gap reference trimming circuit is reduced, the problem that the reference voltage of the band-gap reference circuit rises in the low-voltage state of the input power supply is effectively solved, and the consistency of the reference voltage of the band-gap reference circuit under full-voltage input is improved.

The invention relates to a signal acquisition transmission device used for a track circuit. The signal acquisition transmission device comprises a signal acquisition module, a signal transmission module, a power supply. The signal acquisition module is connected with the track circuit, and is used for the acquisition and the sampling processing of the signals of the track circuit. The signal transmission module is connected with the signal acquisition module, and is used to transmit the signals acquired by the signal acquisition module to outside. The power supply is connected with the signal acquisition module and the signal transmission module, and is used to supply the signal acquisition module and the signal transmission module with power. Compared with the prior art, the signal acquisition transmission device has advantages of accurate signal transmission, diverse signal transmission ways, and easy realization.