46results about How to "Eliminate the effect of resistance" patented technology

The invention relates to a developing roller, which includes a metal mandrel, an intermediate layer and a conductive elastic layer; the intermediate layer includes a support structure and a conductive structure; the support structure is made of hard materials in an integrated manner, and the support structure includes an inner support cylinder , the outer support tube and the spokes connecting the inner support tube and the outer support tube, the inner support tube is set outside the metal mandrel, and the conductive elastic layer is set outside the outer support tube; the inner support tube is formed with a plurality of radially arranged first A through hole, a plurality of radially arranged second through holes are formed on the outer support cylinder; along the axial direction of the developing roller, the spokes extend from one axial end of the intermediate layer to the other axial end of the intermediate layer; conductive The structure is a conductor filled between the inner support cylinder and the outer support cylinder, and in the first through hole and the second through hole, and the conductive elastic layer is electrically connected with the mandrel through the conductor. The developing roller has the advantages of low cost, small deformation of the conductive elastic layer and the like. Furthermore, the present invention also relates to a process cartridge using the above developing roller.

The invention discloses a small-area high-linearity shaping circuit which is used for solving the technical problem that an existing shaping circuit is poor in linearity. According to the technical scheme, the small-area high-linearity shaping circuit comprises a capacity C1, a capacity C2, an operational amplifier A, a NMOS transistor Mdif and n NMOS transistors (M1-Mn). A series-connection RC network is formed by the capacitor C1 and the NMOS transistor Mdif. A parallel-connection RC network is formed by the capacitor C2 and the n NMOS transistors (M1-Mn). Due to the fact that a large-resistance resistor of the circuit is obtained through the NMOS transistors, the chip area is greatly reduced. Due to the fact that the large-resistance resistor is obtained by connecting the NMOS transistors in series, the influence of the voltage of source electrodes and drain electrodes of the transistors on the whole resistance value is reduced, and the linearity is improved. When the shaping time is adjusted, the derivative time and the integral time are adjusted at the same time, and it is ensured that the gain of the shaping circuit is unchanged.

The present invention provides a method and device for determining the internal resistance of a power battery. The method includes: acquiring historical data records of the power battery of an electric vehicle; The theoretical internal resistance value; determining the internal resistance correction parameter; using the internal resistance correction parameter to correct the theoretical internal resistance value to obtain the actual internal resistance value of the power battery within a specified time period. The present invention calculates the theoretical internal resistance value according to the historical data records, and corrects the theoretical internal resistance value through the internal resistance correction parameter to obtain the actual internal resistance value, and does not need to measure the internal resistance of the battery by adding a direct current with a change in size, thus avoiding the complicated measurement operation of the method At the same time, the influence of temperature on the internal resistance of the battery is eliminated through the internal resistance correction parameter, and the actual internal resistance obtained is highly accurate, which facilitates accurate estimation of the available capacity of the battery and maintains the healthy operation of the electric vehicle power battery.