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A method for inducing crystallization of the active layer of an organic solar cell using an interfacial crystalline buffer layer

A solar cell and activity-inducing technology, applied in circuits, photovoltaic power generation, electrical components, etc., to achieve the effects of improving device efficiency, overcoming charge recombination, and improving double-layer stability

Active Publication Date: 2016-06-15
NANCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the latest research reports that these methods will cause PCBM to gather vertically near the PEDOT:PSS layer, while P3HT is far away from the PEDOT:PSS layer and gathers above the active layer, resulting in charge recombination, which is exactly the opposite of the ideal active layer morphology.

Method used

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  • A method for inducing crystallization of the active layer of an organic solar cell using an interfacial crystalline buffer layer
  • A method for inducing crystallization of the active layer of an organic solar cell using an interfacial crystalline buffer layer
  • A method for inducing crystallization of the active layer of an organic solar cell using an interfacial crystalline buffer layer

Examples

Experimental program
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Effect test

Embodiment 1

[0019] This embodiment (structure such as figure 1 Shown) is the introduction of a highly crystalline P3HT crystalline buffer layer into the forward solar cell to induce the crystallization of the P3HT / PC61BM active layer and self-assemble to form an ordered morphology. Specific steps are as follows.

[0020] (1) Cleaning of anodic ITO glass: ultrasonically clean the ITO glass loaded on the matrix glass material with acetone, detergent, deionized water, deionized water ultrasonic, isopropanol ultrasonic, thoroughly clean and bake at 120°C 30 minutes, followed by UV-ozone treatment for 10 minutes.

[0021] (2) Preparation of anode buffer layer: Spin-coat PEDOT / PSS aqueous solution on the surface of the ITO anode cleaned in step (1) to prepare a film with a thickness of about 40nm, and heat at 140°C for 20 minutes.

[0022] (3) Preparation of crystalline buffer layer (highly crystalline P3HT buffer layer): Dissolve P3HT in tetrahydrofuran solvent, ultrasonically dissolve, heat...

Embodiment 2

[0027] This embodiment (structure such as figure 2 (shown) directly uses a layer of highly crystalline P3HT crystalline buffer layer to replace the anode buffer layer to block electrons and induce the self-assembly of the P3HT / PCBM active layer to form an ordered morphology. The specific steps are the same as in Example 1 except step (2) in Example 1.

[0028] The performance of the device is: standard simulated sunlight (AM1.5G, 100mW / cm 2 ) under irradiation, open circuit voltage = 0.624V; short circuit current = 11.5mA / cm 2 ; Fill factor = 55.1%; Energy conversion efficiency = 3.95%.

Embodiment 3

[0030] This embodiment (structure such as figure 1 shown) is to use polydithiophenebenzodithiophene-dithienobenzothiadiazole (PBDT-DTNT) as a crystalline buffer layer to induce polydithiophenebenzodithiophene-dithienobenzothiadiazole ( PBDT-DTNT) and PC 71 The BM active layer undergoes self-assembly to form an ordered morphology.

[0031] The specific implementation steps of this example are as follows.

[0032] (1) Cleaning of anodic ITO glass: ultrasonically clean the ITO glass loaded on the matrix glass material with acetone, detergent, deionized water, deionized water ultrasonic, isopropanol ultrasonic, thoroughly clean and bake at 120°C 30 minutes, followed by UV-ozone treatment for 10 minutes.

[0033] (2) Preparation of anode buffer layer: Spin-coat PEDOT / PSS aqueous solution on the surface of the ITO anode cleaned in step (1) to prepare a film with a thickness of about 40nm, and heat at 140°C for 20 minutes.

[0034](3) Preparation of crystalline buffer layer (high...

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Abstract

A method for inducing an organic solar cell active layer to be crystallized with an interface crystalline buffer layer utilized is characterized in that the crystalline buffer layer is spin-coated between an anode / cathode buffer layer of a forward direction / reverse direction solar cell and the active layer, or between an anode / cathode of the forward direction / reverse direction solar cell and the active layer, the crystalline buffer layer induces donor materials in the active layer of the forward direction solar cell to be crystallized, an ordered active layer feature is formed, and substances of the crystalline buffer layer are substances which can induce the active layer to be crystallized. The method is a simple and effective method for regulating the feature, not only can overcome composition of electric charge, but also can induce the active layer to be crystallized and self-assembled to be ordered arrangement, so that the ideal active layer feature can be formed, and the method is simple and capable of effectively improving efficiency of a device.

Description

technical field [0001] The invention belongs to the technical field of organic optoelectronics. Background technique [0002] With the increasing energy demand and increasingly serious environmental pollution, solar energy, as a clean and renewable green energy, has become the pursuit goal of the whole society. Solar cells are one of the most effective approaches for solar energy applications, which mainly include inorganic solar cells and organic solar cells. Compared with inorganic solar cells, organic solar cells have the advantages of low manufacturing cost, abundant raw materials, simple preparation process, large-area manufacturing, light weight and easy to carry, etc., and have become a research hotspot at home and abroad in recent years. [0003] At present, the active layer of bulk heterojunction polymer solar cells is mainly composed of donor materials and acceptor materials. The donor materials include conjugated polymers such as polythiophene, polyfluorenes and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/46H01L51/48
CPCY02E10/549
Inventor 陈义旺谌烈王培山曾蓉
Owner NANCHANG UNIV