High-voltage-resistant PTC (positive temperature coefficient) ceramic and preparation method thereof

A high-voltage, ceramic technology, applied in the field of high-voltage PTC ceramics and its preparation, can solve the problems of reduced breakdown voltage, increased PTC voltage effect, weak growth ability, etc., and achieves the effect of inhibiting grain growth.

Active Publication Date: 2013-08-28
SUZHOU XINYE ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above conventionally added PTC ceramics have a weak ability to control the growth of their internal grains, resulting in uneven and large grain sizes after firing. When high voltage is applied to both ends of the PTC electrodes, due to the grain size Uneven, the voltage borne by each grain is quite different, and the voltage borne by large grains will be much larger than that of small grains, making it easy for large grains to be unable to withstand breakdown, and the larger grain size and inhomogeneity It will also increase the voltage effect of PTC, and also reduce its breakdown voltage on the other hand, and its withstand voltage performance is poor

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] This embodiment provides a high-voltage resistant PTC ceramic, the weight percentage of its main component and donor doping component is as follows: BaCO 3 : 42%, Pb 3 o 4 : 31.189%, TiO 2 : 26%, CaCO 3 : 0.6%, Sb 2 o 5 : 0.05%, Nd 2 o 3 : 0.001%.

[0016] In this embodiment, the donor doping composition adopts Sb 2 o 5 and Nd 2 o 3 Compound addition, where Sb 5+ The ionic radius is close to that of titanium ions and can replace Ti 4+ bit acts as a donor, while Nd 3+ The ionic radius of Ba 2+ Similar, can replace Ba 2+ bit acts as a donor impurity, Sb 5+ and Nd 3+ The effect of inhibiting grain growth is much better than that of traditional Nb 5+ or Y 3+ , and the use of two-component compound doping can reduce the grain size to the greatest extent.

[0017] In this embodiment, the main component and the donor doping component are also added with the following weight percentage of the acceptor doping component and the glass phase component: MnO 2 :...

Embodiment 2

[0026] The rest are the same as in Example 1, except that the weight percent of the main component and the donor doping component of the high-voltage resistant PTC ceramic provided in this example is as follows: BaCO 3 : 36%, Pb 3 o 4 : 33%, TiO 2 : 28.577%, CaCO 3 : 1.8%, Sb 2 o 5 : 0.13%, Nd 2 o 3 : 0.003%.

[0027] The following weight percentages of acceptor doping components and glass phase components are also added: MnO 2 : 0.04%, LiCO 3 : 0.05%, SiC: 0.1%, BN: 0.3%.

[0028] This embodiment also provides a method for preparing a high-voltage resistant PTC ceramic, comprising the following steps:

[0029] Step 1: according to weight percentage, the BaCO of 36% 3 , 33% Pb 3 o 4 , 28.577% TiO 2 , 1.8% CaCO 3 , 0.13% Sb 2 o 5 , 0.003% Nd 2 o 3 Mixed into mixture A, after ball milling for 26 hours, discharge and press filter, and pre-fire the main material at 1180°C;

[0030] Step 2: according to weight percentage, the MnO of 0.014% 2 , 0.025 % LiCO3 ,...

Embodiment 3

[0033] The rest are the same as in Example 1 or 2, except that the weight percent of the main component and the donor doping component of the high-voltage resistant PTC ceramic provided in this example is as follows: BaCO 3 : 41.684%, Pb 3 o 4 : 28%, TiO 2 : 29%, CaCO 3 : 1%, Sb 2 o 5 : 0.1%, Nd 2 o 3 : 0.002%.

[0034] The following weight percentages of acceptor doping components and glass phase components are also added: MnO 2 :0.03%, LiCO 3 : 0.03%, SiC: 0.08%, BN: 0.2%.

[0035] This embodiment also provides a method for preparing a high-voltage resistant PTC ceramic, comprising the following steps:

[0036] Step 1: according to weight percentage, the BaCO of 41.684% 3 , 28% Pb 3 o 4 , 29% TiO 2 , 1% CaCO 3 , 0.1% Sb 2 o 5 , 0.002% Nd 2 o 3 Mixed into mixture A, after ball milling for 25 hours, discharge and press filter, and pre-fire the main material at 1140°C;

[0037] Step 2: according to weight percentage, the MnO of 0.03% 2 , 0.03 % LiCO 3 , ...

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Abstract

The invention relates to a high-voltage-resistant PTC (positive temperature coefficient) ceramic and a preparation method thereof. The high-voltage-resistant PTC ceramic comprises the following main component and donor doping components in percentage by weight: 36-42% of BaCO3, 28-33% of Pb3O4, 26-29% of TiO2, 0.6-1.8% of CaCO3, 0.05-0.13% of Sb2O5 and 0.001-0.003% of Nd2O3. The donor doping components Sb2O5 and Nd2O3 are added compositely; the radius of Sb<5+> ions is approximate to that of titanium ions, and thus, the Sb<5+> can substitute Ti<4+> as the donor; the radius of Nd<3+> ions is approximate to that of Ba<2+>, and thus, the Nd<3+> can substitute Ba<2+> as a donor impurity; the effect of Sb<5+> and Nd<3+> on inhibiting grain growth is much better than that of the traditional Nb<5+> or Y<3+>; and the double-component composite doping can maximally reduce the grain size and enhance the voltage resistance of the PTC ceramic.

Description

technical field [0001] The invention relates to a high-voltage-resistant PTC ceramic and a preparation method thereof. Background technique [0002] PTC ceramic is a kind of electronic ceramic, which is a semiconductor at room temperature, and its resistance increases sharply with the increase of temperature, showing a positive temperature coefficient relationship (that is, the PTC effect). The donor impurities of existing PTC ceramics generally use Nb 2 o 5 or Y 2 o 3 , used to form the semiconductor of PTC ceramics, the glass phase generally uses TiO 2 , SiO 2 and BN are used to adsorb harmful impurities inside, improve the semiconducting degree of grains, and control grain growth. The above conventionally added PTC ceramics have a weak ability to control the growth of their internal grains, resulting in uneven and large grain sizes after firing. When high voltage is applied to both ends of the PTC electrodes, due to the grain size Uneven, the voltage borne by each ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/468C04B35/622
Inventor 姜文中
Owner SUZHOU XINYE ELECTRONICS
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